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Z-RAM Memory Breakthrough Fabricated on a 50nm DRAM Process

Innovative Silicon, Inc., developer of the Z-RAM zero-capacitor floating body memory technology, and Hynix Semiconductor Inc. announced today that Hynix will deliver a paper titled 'Highly scalable Z-RAM with remarkably long data retention for DRAM application' at the 2009 Symposium on VLSI Technology.

Posted: Jun 9th, 2009

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