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The latest news from academia, regulators
research labs and other things of interest

Thailand increases incentives for nanotechnology investment

The aim of this initiative which has been in the works since 2009 is to encourage more use of high-technology in Thailand's nanomanufacturing. This type of business will be categorized as a top priority business which brings greater benefits to the country and boost Thailand's positioning as an attractive investment destination.

Posted: Dec 21st, 2010

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Video shows first working invisibility cloak

Researchers at Fractal Antenna Systems have written a new chapter in the science of making things disappears. Their wideband microwave invisibility cloak, first revealed in March 2009, now makes its debut for everyone to see in a new video.

Posted: Dec 20th, 2010

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Strange new twist: Researchers discover Moebius symmetry in metamaterials

For years, scientists have been searching for an example of Moebius symmetry in natural materials without any success. Now a team of scientists has discovered Moebius symmetry in metamaterials - materials engineered from artificial 'atoms' and 'molecules' with electromagnetic properties that arise from their structure rather than their chemical composition.

Posted: Dec 20th, 2010

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Muscle filaments make mechanical strain visible

Plastics-based materials have been in use for decades. But manufacturers are facing a serious hurdle in their quest for new developments: Substantial influences of the microscopic material structure on mechanical material properties cannot be observed directly. The synthetic polymer molecules are simply too small for microscopic observation in mechanical experiments. A team of physicists has now developed a method that allows just these kinds of measurements.

Posted: Dec 20th, 2010

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Scientists take plasmon lasers out of deep freeze

Researchers at the University of California, Berkeley, have developed a new technique that allows plasmon lasers to operate at room temperature, overcoming a major barrier to practical utilization of the technology.

Posted: Dec 20th, 2010

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High-quality III-V layers on Si(001) pave the way to high-performance Ge/III-V CMOS

Imec has demonstrated the selective area growth of high-quality InP layers on 200mm Si(001) wafers. Key to avoiding the typically formed and unwanted antiphase boundaries (APBs) is the creation of atomic steps on a thin Ge buffer layer. This result is a major step forward towards the fabrication of high-performance Ge/III-V CMOS devices and the integration of optoelectronic devices on a Si chip.

Posted: Dec 18th, 2010

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