Current fabrication technologies for nanoscale devices include deep-UV or electron-beam (e-beam) lithography. Both of these techniques involve successive deposition of metal or insulating layer and a resist layer, which is patterned using a UV source or a scanning electron beam. The process needs to be repeated for each layer of the architecture while the sample is taken out of the high vacuum chamber. Thus, multilayer lithography processes seriously compromise throughput and cost. In addition, the resolution is limited in the sub-10 nm regime. Researchers at the Institute of Bioengineering and Nanotechnology (IBN) in Singapore have now successfully demonstrated, for the first time, a lithography-free, direct-write technique for fabricating discrete field-effect transistors, as well as digital logic gates on a single nanowire.
Ferroelectric materials have unique properties - spontaneous, switchable polarization, piezoelectricity, and pyroelectricity - that makes them attractive for a host of applications, ranging from medical ultrasound to examine fetuses and internal organs, military sonar for underwater navigation and detection, to energy harvesting devices for powering mobile gadgets. Recently, memory storage devices utilizing ferroelectrics have gained much attention due to their nonvolatility and fast switching speed. It was theoretically predicted that a nanodisk with a diameter of 3.2 nm could maintain spontaneous polarization. However the fabrication of ferroelectric nanostructure at this size level is extremely difficult and the smallest diameter for ferroelectric nanostructure with narrow size distribution obtained from experiments so far has been 60 nm. Researchers have now managed to prepare an ultrahigh density array of lead titanate nanoislands with a lateral dimension of 22 nm and a height of 7 nm.
One of the most neglected aspects in the nanoelectronics field is the problem of wiring. How do we wire individual nanoelectronic devices within a nanointegrated circuit together? Furthermore, how do we extract and input information from such a circuit - i.e. how do we let it communicate with the outside world? Researchers at Caltech present a method for multiplexing the electrical signals from potentially tens of thousands of nanoscale sensors onto a single optical output, using piezoelectric nanoscale mechanical resonators. This work is a step closer to building miniscule, highly integrated sensor arrays that are untethered from the external environment.
Even though traditional, digital computers have consistently increased in speed and complexity, they are limited by their reliance on sequential processing of instructions; i.e. no matter haw fast they are, they still process only one bit at a time. By contrast, individual neurons in our brain are very slow: they fire at only about 1000 times per second; however, since they are operating in a massively parallel way, with millions of neurons working collectively, they are able to complete certain tasks more efficiently than even the fastest super-computer. Another important distinction of our brain is that, during computing, information processing circuits evolve continuously to solve complex problems. An international research team from Japan and Michigan Technological University has now created a similar process of circuit evolution in an organic molecular layer, which also solves complex problems. This brain-like 'evolutionary' circuit has been realized for the first time in the world.
If you think that building an artificial human brain is science fiction, you are probably right - for now. But don't think for a moment that researchers are not working hard on laying the foundations for what is called neuromorphic engineering - a new interdisciplinary discipline that includes nanotechnologies and whose goal is to design artificial neural systems with physical architectures similar to biological nervous systems. One of the key components of any neuromorphic effort is the design of artificial synapses. The human brain contains vastly more synapses than neurons - by a factor of about 10,000 - and therefore it is necessary to develop a nanoscale, low power, synapse-like device if scientists want to scale neuromorphic circuits towards the human brain level. New research now suggests that memristor devices are capable to emulate the biological synapses with properly designed CMOS neuron components.
Researchers have been exploring boron nitride (BN) nanomaterials - from nanotubes to nanosheets and nanoribbons - and found similarities, but also differences to the the properties of the corresponding carbon nanomaterials. Motivated by the outstanding properties of graphene, the boron nitride single layer - a structural analogy of graphene - has been extensively studied both theoretically and experimentally, and has been experimentally realized. However, BN nanomaterials are wide-band-gap semiconductors, and their band structures are rather robust, and difficult to modulate, which is a substantial obstacle for their applications in nanoelectronic devices. Researchers have now shown that hydrogenation might be a simple approach to tune the band structure of graphene-like boron nitride structures.
Continuing miniaturization has moved the semiconductor industry well into the nano realm with leading chip manufacturers on their way to CMOS using 22nm process technology. With transistors the size of tens of nanometers, researchers have begun to explore the interface of biology and electronics by integrating nanoelectronic components and living cells. While researchers have already experimented with integrating living cells into semiconductor materials other research is exploring the opposite way, i.e. integrating nanoelectronics into living cells. Researchers in Spain have demonstrated that silicon chips smaller than cells can be produced, collected, and internalized inside living cells by different techniques (lipofection, phagocytosis or microinjection) and, most significantly, they can be used as intracellular sensors.
All existing transistors are based on junctions - obtained by changing the polarity of silicon from positive to negative. Researchers have now demonstrated a new type of transistor in which there are no junctions and no doping concentration gradients. The key to fabricating a junctionless gated resistor is the formation of a semiconductor layer that is thin and narrow enough to allow for full depletion of carriers when the device is turned off - something that was achieved by fabricating silicon nanowires with a diameter of a few dozens of atomic planes. The electrical current flows in this silicon nanowire, and the flow of current is perfectly controlled by a ring structure that electrically squeezes the silicon wire in the same way that you might stop the flow of water in a hose by squeezing it.