In new work, an international team of researchers describes the drawing and Raman characterization procedure developed for placing single-walled carbon nanotubes (SWCNTs), proof of SWCNT alignment, optimization of the drawing parameters, and the subsequent placement in predefined lithographic structures for the demonstration of electrical conductivity. In essence, the team developed a simple nanopen for drawing and placing aligned single or multiple rod like molecules nanometrically.
By replacing dye inks with optical nanostructures, researchers have demonstrated the use of inkjet technology to create colored interference layers with high accuracy without the need for high-temperature fixing. The key to this technology is the ability to control the inkjet printing process to form nanostructures with high accuracy. Whereas conventional inkjet printing occurs in the microrange, this new work demonstrates that optical structures can be printed with much greater accuracy, which in particular opens the prospects in developing controlled interference printing of interference color images.
Hierarchical porous carbon/graphene (HPC/HPG) materials have been intensively investigated over the past decades. These materials are demonstrated as promising electrode materials for various systems, such as lithium-ion batteries, lithium-sulfur batteries, supercapacitors, and fuel cells, with a remarkable capacity, high efficiency, long stability, and excellent rate capability. Researchers have now proposed the employment of hierarchical porous calcium oxide (CaO) particles as effective catalytic template for the facile CVD growth of graphene.
In the past couple of decades, nickel-tungsten (Ni-W) amorphous and nanocrystalline materials have been drawing more and more research interest due to the superior mechanical properties such as high hardness, good mechanical performance, and excellent corrosion resistance. Striving to enhance the mechanical performance of Ni-W thin film alloys, researchers report how the annealing temperature will influence the microstructure evolution and the fracture properties of Ni-W alloys.
Bubble-pen lithography (BPL) is a novel optically controlled nanofabrication technique that can be widely applied to pattern colloidal and biological particles on substrates in order to build functional optic, electronic, and magnetic devices. In BPL, an optically controlled microbubble is generated to capture and immobilize colloidal particles on the plasmonic substrates. With this new lithographic technique, the researchers can generate bubbles down to 1 micron in diameter. The smaller bubbles provide an enhanced patterning resolution.
Researchers have approached the preparation of artificial analogs of nacre by using various methods and the resulting materials have captured some of the characteristics of the natural composite - but so far never have fully replicated it. Now, researchers have reported the first successful attempt to mimic the structure of nacre while maintaining the same characteristic geometry, aspect ratio and phase proportions. They used 10-20 nm thick layered double hydroxide (LDH) platelets with an aspect ratio similar to the aragonite platelets in nacre and 'glued' them together with a simple organic 'mortar' (PSS).
Rollable displays and other flexible, stretchable electronic systems are often enabled by the successful integration of nanostructured materials. Most commercially available flexible electronic circuits and devices are fabricated on flexible plastic substrates, such as polymeric amides, PEEK polymers, or transparent conductive polyester films. Although these substrates can be easily bent and rolled up, they cannot be used to fabricate rollable display-integrated gadgets that are fixed at a rigid perpendicular position on their own. To overcome this issue, researchers have now used a reversibly bistable material to demonstrate flexible electronics.
Compared to the conventional inefficient incandescent and fluorescent lighting technologies, LED light bulbs can, in principle, operate at an efficiency level of 100%. The current LED lighting technology, however, is not even close to reaching this limit. This is due to several problems which, however, can be by and large solved by employing tunnel junction integration into current nanowire LED structures. Demonstrating this, researchers have developed tunnel junction nanowire LEDs that can eliminate the use of resistive p-GaN contact layers, leading to reduced voltage loss and enhanced hole injection.