| Jan 08, 2014 |
New Computer Aided Design solutions to reduce cost and time to market of high performance energy efficient nanoelectronics
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(Nanowerk News) Enabling fast and effective design of new transistors for high performance electronics with greatly reduced power consumption. This is the ambitious objective that a unique multidisciplinary team of scientists and engineers from five European countries and eight Research institutions, Universities and industrial R&D labs will pursue in the next three years under the leadership of the Italian university consortium for nanoelectronics, IUNET, in the framework of the EC funded project III-V-MOS "Technology CAD for III-V Semiconductor-based MOSFETs".
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Nanoelectronics is recognized as a key enabling technology with profound impact on all aspects of our daily life, in particular in the fields of communication, computing, consumer electronics, health, transport, environment and secure societies. To sustain the progress of high-performance energy-efficient nanoelectronics, a new scenario is currently pursued by the industry worldwide where innovative devices based on so called III-V compound semiconductor materials will replace in part conventional silicon transistors. The integration of III-V devices into silicon platforms may reach production as early as 2018 but, for this scenario to become reality, accurate technology computer aided design (TCAD) tools will be necessary. In fact nanoelectronics relies on intensive use of TCAD to cut development costs and significantly reduce time to market.
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The III-V-MOS project consortium addresses this need for advanced TCAD and will provide the European Semiconductor Industry and the European nanoelectronics research centers with dependable, accurate and calibrated models and methods, integrated into user friendly simulation tools, for timely and successful introduction of the new III-V devices in mainstream nanoelectronics technology.
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The project builds upon the strong modeling and simulation expertise of European academic partner institutions (IUNET consortium and ETH-Zurich). Future exploitation and high impact of the project results are guaranteed by the TCAD market leader (Synopsys); by a SME specialized in the growing business of atomistic simulations for technology development (QuantumWise - Denmark); by a research center (IMEC - Belgium) and an industry lab (IBM Research - Zurich) and by the European silicon foundry GLOBALFOUNDRIES Dresden. The SINANO Institute will set up effective strategies for dissemination of project results and completes the partners list.
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The III-V-MOS consortium partners
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Academic institutions
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Consorzio Nazionale Interuniversitario per la Nanoelettronica IUNET (Italy – project coordinator)
Eidgenoessische Technische Hochschule, ETH Zurich (Switzerland)
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Research Centers
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Interuniversitair Micro-Electronica Centrum VZW (Belgium)
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Research Institutes
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SiNANO Institute (France)
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Industrial Organizations
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IBM Research GmbH (Switzerland)
QuantumWise A/S (Denmark)
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG (Germany)
Synopsys Switzerland LLC (Switzerland)
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