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Posted: April 9, 2009
Toshiba 43nm NAND Flash Selected as the Most Innovative Non-Volatile Memory by Semiconductor Insights
(Nanowerk News) Toshiba America Electronic Components, Inc. (TAEC) announced that Toshiba 43nm MLC NAND flash was selected as the Most Innovated Non-Volatile Memory in Semiconductor Insights' Eighth Annual Insight Awards.
"This is the first NAND flash die to use a high-k inter-poly dielectric instead of the traditional oxide/nitride/oxide dielectric. In addition, Toshiba 43nm NAND flash packs 16Gbit(1) into a single die of approximately 120mm(2) that uses an all-bitline architecture to improve performance," said Emil Alexov, vice president and general manager, Semiconductor Insights.
"We're honored to receive this recognition of the innovations in our 43nm NAND flash memory, which enable performance advantages in our Single-Level Cell and Multi-Level Cell NAND flash product lines as well as our advanced solid state drives," said Scott Nelson, vice president, memory, for Toshiba America Electronic Components.
The Insight Awards program recognizes companies for achieving technical strides through innovative design and technological advancements in the semiconductor industry. The awards were presented at the EE Times ACE Awards and Insight Award presentation on March 31, 2009, as part of TechInsight's Embedded Systems Conference in San Jose. The Insight Awards were judged by a panel of industry experts, including Edward Keyes, chief technology officer, TechInsights Services; David Carey, president, Portelligent; Patrick Mannion, editorial director, TechOnline; and senior analysts from Semiconductor Insights.
TechInsights is a leading source of business and technology information for the electronics industry with global brands such as EE Times, Semiconductor Insights, TechOnline, the Embedded Systems Conference, and Portelligent
Source: Toshiba America Electronic Components (press release)