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Posted: February 17, 2010
SEMATECH to show advances in EUV lithography at SPIE 2010
(Nanowerk News) Critical issues and potential solutions in preparing extreme ultraviolet lithography (EUVL) for high-volume manufacturing will be explored by SEMATECH technologists at the SPIE Advanced Lithography 2010 conferences Feb. 21-25 in San Jose, CA.
The SEMATECH Lithography Program is based at the College of Nanoscale Science and Engineering’s (CNSE) Albany NanoTech Complex.
“SEMATECH has had an extraordinary year in lithography, and we plan to demonstrate our successes at SPIE,” said Bryan Rice, Lithography Director. “We’ll show how we are consistently leading the industry in enabling EUV mask and resist/materials infrastructure as well as EUVL manufacturing feasibility and affordability.”
A leading topic will be EUVL mask infrastructure, an area in which SEMATECH has proposed a new industry consortium. Advances in EUV resist development – including SEMATECH’s success with its 0.3 numerical aperture (NA) microexposure tools (MET) at CNSE and the University of California at Berkeley – also will be featured. Other SEMATECH papers will cover particle removal and inspection for EUV masks, and metrology techniques for optical defect inspection and double patterning.
For 20 years, SEMATECH® (www.sematech.org), the international consortium of leading semiconductor manufacturers, has set global direction, enabled flexible collaboration, and bridged strategic R&D to manufacturing. Today, we continue accelerating the next technology revolution with our nanoelectronics and emerging technology partners.