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Posted: Mar 17, 2011
Beiji Haotian Technology Upgrades Power LED epi Capacity With AIXTRON G4 and G5 Systems
(Nanowerk News) AIXTRON SE today announced an order for MOCVD reactors from new customer Beiji Haotian Technology Co., Ltd. The order for a total of five systems comprises two AIX 2800G4 HT deposition systems in the 42x2-inch configuration and three AIX G5 HT deposition systems in the 56x2-inch configuration. The Jiangsu, China-based company placed the order during the second quarter of 2010 and following delivery between the first and second quarter of 2011, the systems will be used for production of power chip LEDs.
The local AIXTRON support team will commission the systems in a dedicated facility at a production plant in YiXing city, Jiangsu province, China.
Mr. JiaYe Yang, Vice President of Beiji Haotian Technology Co. comments, "The close cooperation with AIXTRON who have been working up our capabilities in epitaxy technology has resulted in a new large-scale investment for our LED epi business. This plan also involves further cooperation with Tsinghua University who will make a technical transfer from an AIXTRON Planetary ReactorŽ platform to our new systems. Due to the proven compatibility of these systems and the excellence of the AIXTRON process transfer and service we see this will be a straightforward procedure. AIXTRON's technology transfer engineers make up the most experienced team in this business."
Tsinghua University is involved in a new LED patent technology transfer and long-term cooperation agreement entitled the "Arctic Haotian high-power HB LED Chip Project" which will take place in the Jiangsu Yixing Economic Development Zone and provide long-term production, R&D and training support.
A major project investment of about 473 million yuan (about EUR 51.5m) for 1W high power chips is planned in the period up to May 2011. Phase II of the LED production project should be completed by the end of 2012 with an additional investment of 500 million yuan (about EUR 54.5m). This will include ten new MOCVD units and supporting production lines with a total of 567 thousand yuan (about EUR 62k) and a total investment for 1W high power chips of nearly 1.42 billion yuan (about EUR 155m).