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Posted: February 19, 2008
Micromem Technologies Inc. Announces a High Density Array Magnetic Anomaly Sensor Development Plan
(Nanowerk News) Micromem Technologies Inc.
(OTC BB: MMTIF) announced its Magneto-resistive random access
memory (MRAM) is a highly probable candidate for the universal memory,
characterized mainly by high speed (read/write), high density and
non-volatility. Micromem has designed a new process architecture for MRAM.
We are pleased to announce that our foundry tests have demonstrated a
number of valuable advantages for a magnetic-based sensor and memory
device: including high sensitivity, thermal stability and simplicity and
low cost manufacturing.
We demonstrated that hysterisis-free operation can be expected for
systems incorporating our technology, dynamic range and linear field
response is now characterized to depend upon material and geometry and the
active element of our Hall cross sensor is the intersection of the Hall
bars which can be miniaturized to the lithography limits. No change in
sensitivity was detected with the line when reduced from 10 to 0.1 micron.
Micromem now has a new and highly sensitive Hall device fabricated via
a simplified process. The company has demonstrated that a unique shape of
the device design represents the optimum concentration of the sensitivity
of the sensor, the measurement range and the overall size of the chip.
Initial testing indicates a sensitivity of 2.2 V/T with a minimal bias
voltage; the lowest detectable field is 0.2 micro-T, and the linearity of
better than 1% in the measurement range. Micromem has patented the unique
shape of our sensor with particular emphasis on magnetic yoke form factor
and its orientation relative to the Hall sensor.
In addition Micromem announces today that it has released to a third
party the design and manufacture of a high-density magnetoresisitve sensor
array. This design will focus on the innovative use of magnetism,
electronics and nanotechnology. The company believes this sensor has market
value in military, medical, forensic and human interface applications. The
256 x 256 sensor array is planned as a demonstration of the flexibility of
non-invasive capabilities of magnetic anomaly detection, combined with the
ability to measure absolute field strengths in Oersteds/Gauss.
About Micromem Technologies Inc.
Micromem Technologies, Inc. (http://www.micromeminc.com) is focused on the
development of magnetic random access memory (MRAM) technology.