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Posted: February 21, 2008
SEMATECH and ISMI to Focus on Manufacturability at SPIE
(Nanowerk News) Engineers from SEMATECH and the International SEMATECH Manufacturing Initiative (ISMI) will deliver more than 30 papers and posters during the SPIE Advanced Lithography conferences next week in San Jose, CA, with an overriding emphasis on the manufacturability of current and emerging technology options to take the industry to 32nm half-pitch and beyond – including extreme ultraviolet (EUV) lithography, 193nm optical lithography extensions, and related areas of metrology, inspection, and process control.
Among the global semiconductor community’s leading gatherings, the SPIE conference series attracts thousands of specialists in various aspects of lithography and related metrology, two of the most challenging areas of advanced microchip production. SEMATECH and ISMI engineers will report their progress on some of the most critical determiners of lithographic manufacturability – such as defect-free EUV mask blanks, defect-free reticle handling, resist outgassing procedures, projection-quality high index lens materials, generation 3 high-index fluids, and techniques in scatterometry, CD-SEM metrology, and process control.
“SEMATECH continues to lead the development of EUV infrastructure and to demonstrate breakthrough results. We have made tremendous progress on several critical issues,” said Michael Lercel, SEMATECH’s director of lithography, “and we’re the only consortium pursuing high-index lens materials and fluids to extend 193nm immersion. Across the board, our lithography program is focused on developing manufacturable technologies – that’s what our members want, and that’s what we’ll report on at SPIE.”
“ISMI’s metrology program is focused on the 32nm and 22nm generations, to facilitate lithographic innovation,” said John Allgair, ISMI metrology program manager and the chair of SPIE’s conference on metrology, inspection, and process control for microlithography. “But our presentations at SPIE will also clearly reflect ISMI’s mission to improve manufacturing productivity and reduce manufacturing costs.”
Highlights of SEMATECH-led presentations at SPIE, which outline breakthrough results from SEMATECH’s lithography programs at the University at Albany’s College of Nanoscale Science and Engineering, include:
Development and evaluation of platforms for a 193-nm immersion generation-three fluid -- Monday, 25 February, 4:20 p.m. to 4:40 p.m. -- given by Paul Zimmerman, Jeffrey Byers, Bryan Rice with co-authors from Cornell and Columbia Universities
Panel Discussion on Future Projection Lithography: Optical or EUV? On Tuesday, 26 February, 6:30 p.m. to 8:30 p.m.
Ben Eynon, SEMATECH's associate director of lithography, will serve as panel moderator for a lively discussion of whether optical, EUV, or an alternative lithography will prevail at the 22nm node and beyond
Four of the five papers presented in the EUV Mask session, on Thursday, 28 February, 8:00 a.m. to 9:50 a.m.
Ion-beam deposition for defect-free EUVL mask blanks -- authored by Patrick Kearney, C.C. Lin, and Chan-Uk Jeon, in partnership with colleagues from Asahi Glass and Veeco.
Determining the critical size of EUV-mask substrate defects -- presented by HakSeung Han, Wonil Cho, Chan-Uk Jeon, and Stefan Wurm, and co-authors from Lawrence Livermore and Lawrence Berkeley National Labs
Status of EUV-reticle handling solution in meeting 32 and 22-nm HP EUV Lithography -- delivered by Long He, Stefan Wurm, Phil Seidel, and Kevin Orvek
Sub-50nm cleaning-induced damage in EUV mask blanks -- authored by Abbas Rastegar, Sean Eichenlaub, Arun Johnkadaksham, Vivek Kapila, and Pat Marmillion
Key ISMI presentations in the Metrology, Inspections, and Process Control conference include:
Measurement of high-k and metal film thickness on Fin FET sidewalls using scatterometry -- Tuesday, 26 February, 2:50 p.m. -- authored by Jimmy Price, Benjamin Bunday, Casey Smith, Muhammad Hussain, Rusty Harris, and colleagues from KLA-Tencor
Impact of sampling on uncertainty: semiconductor dimensional metrology applications -- Tuesday, 26 February, 4:00 p.m. -- presented by Ben Bunday, co-authored by IBM, Applied Materials, ASML, NIST, TI, Qimonda and Toshiba
Characterization of CD-SEM metrology for iARF photoresist materials -- Wednesday, 27 February, 10:50 a.m. -- authored by Ben Bunday, John Allgair, Bryan Rice, Jeff Byers, and colleagues from Applied Materials
SEMATECH and ISMI expert technologists will be available for media interviews on request.
For 20 years, SEMATECH® (www.sematech.org), the global consortium of leading semiconductor manufacturers, has set global direction, enabled flexible collaboration, and bridged strategic R&D to manufacturing. Today, we continue accelerating the next technology revolution with our nanoelectronics and emerging technology partners.