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Posted: September 11, 2008
Workshop on nanowire growth mechanisms
(Nanowerk News) The 3rd Nanowire Growth Workshop follows the "Lund Wire Growth Workshops" in 2006 and 2007.
The self-assembled growth of nanowires is presently a highly active research area, with a rapidly increasing amount of experimental data and theoretical modelling becoming available. However, the basic principles and mechanisms behind nanowire growth are still not completely understood. This workshop will cover topics related to the fundamental growth mechanism of:
III-As, III-P, III-N, III-Sb, ZnO on various substrates such as III/V, Si, and other
Au - and other metals - seeded nanowires and completely metal-free growth
crystalline defects and morphology
novel approaches to nanowire self-assembly
It is the aim of this workshop to stimulate discussions and understanding of the general mechanisms and structural features behind self-assembled nanowire growth within the wide range of materials systems. The workshop will include both experimental studies and theoretical modelling. The workshop will focus on generating lively discussion, thus generous time will be given between each oral presentation, and we encourage further interaction during coffee breaks and dinner. To have a good discussions forum we will limit the number of attendants to 50-60.
The workshop will be supported by the following organizations:
The Node Consortium (nanowire-based one dimensional electronics)
The Center of Excellence SFB 445 "Nanoparticles of the Gasphase", University Duisburg-Essen
Center for Nanointegration Duisburg-Essen
Center of Semiconductor Technology and Optoelectronics, Solid-State Electronics Dept.
The workshop language is English. There will be both invited and contributed talks at the workshop. The presentation is oral and the time for invited talks is 30 min and for contributed presentation 15 min.