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Posted: November 24, 2008

MagnaChip Offers Advanced Bipolar CMOS-DMOS Process Technology

(Nanowerk News) MagnaChip Semiconductor Ltd., a leading Asia-based designer and manufacturer of analog and mixed-signal semiconductor products for high volume consumer applications, today, announced the availability of its that it completed the development of industry leading 0.18µm aBCD and 0.35µm aBCD (Advanced Bipolar CMOS-DMOS) process technologies for foundry customers.
The MagnaChip aBCD process technologiesy nodes represent the latest solutions of ASTech, or Application Specific Technology developed to meet the specialized customer needs for specific applicationsof our customers. The flexibility of two aBCD process nodes, 0.18µm and 0.35µm allow our customers to address a wide range of applications. is based on the concept of ASTech, or Application Specific Technology, designed to satisfy customer requirements for specific applications. The 0.18µm aBCD process is suitable for complex, highly integrated power management ICs, such as those found in mobile handsets. while Tthe 0.35µm aBCD, with higher voltage and power capabilities, is well suited for applications such as is bet fit to compatible with LED driver IC, applications for for LCD TVs and Notebooks. MagnaChip has combinedThis technology has the cost and device performance of smaller chips with , as well as better leakage characteristics, more uniform & higher isolation breakdown voltage and improved latch-up immunity. First products from the new aBCD processes are sampling now. Initial product validations are now entering the final phase of qualification. Mass production will begin in the first half of 2009.
Namkyu Park, Vice President of Technology Engineering of MagnaChip’s Semiconductor Manufacturing Services, commented, “MagnaChip’s aBCD process technology has adopted a the reliable, innovative DTI (Deep Trench Isolation) process, rather than the conventional junction isolation standard JI (Junction Isolation) process., This to satisfy both reliability and cost requirementseffectiveness. Within the aBCD process, the The DMOS device was optimized for has low Rsp (Specific Ron), enabling which is essential to improveding the drivieng capability forin power management ICs. EnWith compassing these featurescharacteristics, we have designed a robust application-specific technology for the foundry customersindustry, a departure from the traditional offeringscut-and-dry development concept. “
MagnaChip’s aBCD process can provide many benefits to foundry customers throughWith DTI technology, the MagnaChip aBCD process . First, DTI technology can achieves cost reduction by dramatically reducing the high voltage transistor pitch, and chip size up to almost half when compared to normal junction isolation. Second, DTI can achieve Bbetter product reliability and latch-up characteristics are achievedfree products by locating the deep trench isolation between high voltage junctions prone to latch-up, eliminating one of the biggest concerns in power management IC design. Third, DTI can achieve better device performance such as high switching speed by removing parasitic resistance and capacitance between high voltage wells. Lastly, it can achieve much lower leakage characteristics as well as more repeatable and higher breakdown voltage characteristics than junction isolation.
DTI based aBCD can help to improve a customer’s competitive edge by providing value added process technology, product performance, quality and productivity. The aforementioned Better device performance such as high switching speed are achieved by removing parasitic resistance and capacitance between high voltage wells. Lastly, much lower leakage characteristics as well as more repeatable and higher breakdown voltage characteristics than junction isolation, are achieved. Both ttechnology nodesies are fully voltage scalable fully voltage, enabling scalable as designers to can apply EDMOS or LDMOS devices atto various voltage levels to meet their needs. Thus, DTI based aBCD provides design flexibility through multi voltage design. . Additionally, MagnaChip offers It allows designers to select various kinds of process options such as Nn//Pp- EDMOS, N/P-n/p LDMOS, low voltageLV & high voltageHV BJT, 1∼4fF MIM Capacitor, 0.52k∼10k Ohm Resistor, Schottky Diode, Zener Diode, low voltage LV & high voltage /HV Diode, OTP (One Time Programmable memory)OTP or EEPROM, SRAM, and nNative CMOS etc. MagnaChip also provides a quality designer friendly Pprocess Ddesign Kkit for aBCD process technologies.
Channy Lee, Executive Vice President and General Manager of MagnaChip’s Semiconductor Manufacturing Services, commented, “MagnaChip has been making substantial efforts to develop industry leading advanced BCD process technology. We are very pleased to finally announce the offering of our revolutionary 0.18µm and 0.35µm advanced BCD process technology to better meet the increasing demand for high volume and high growth target applications such as mobile handsets, LCD TVs etc. We expect to expand our application specific process portfolio to automotive, power over ethernet and high performance audio amplifier applications as we continually seek to understand and address our foundry customers’ needs going forward.”
About MagnaChip Semiconductor
Headquartered in Seoul, South Korea, MagnaChip Semiconductor is a leading, Asia-based designer and manufacturer of analog and mixed-signal semiconductor products for high volume consumer applications, such as mobile phones, digital televisions, flat panel displays, notebook computers, mobile multimedia devices and digital cameras. The Company has a broad range of analog and mixed-signal semiconductor technology, supported by its 29-year operating history, large portfolio of registered and pending patents and extensive engineering and manufacturing process expertise. For more information, visit www.magnachip.com.
Source: MagnaChip (press release)
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