Hokkaido Innovation through NanoTechnology Support (HINTS) is a nanotechnology support project centered at Hokkaido University (Research Institute for Electronic Science, Catalysis Research Center, Center for Advanced Research of Energy Conversion Materials, and Research Center for Integrated Quantum Electronics) with close cooperation of Chitose Institute of Science and Technology.
Research activity of the MBE Electronics Group is based on the advanced semiconductor nanotechnology utilizing molecular beam epitaxy (MBE) crystal growth and a unique UHV (ultra-high vacuum)-based multi-chamber system.
The main objective of this Research Group is to carry out intensive research on formation of compound semiconductor nanostructures and their high-density arrays by utilizing metalorganic vapor-phase epitaxial (MOVPE) growth.
The PMNP Laboratory (Yan research group) is interested in high-accuracy, high-efficiency, resource-saving manufacturing technologies. Through micro/nanometer-scale material removal, deformation, and surface property control, new products with high added value are provided to micromechanical, optical, optoelectronic, and biomechanical applications. The group is exploring multidisciplinary R&D by interfacing with mechanical science, physics, material science and nanotechnology.
Major research topics are Optical Properties of Mesoscopic Particles; Fabrication and Characterization of Novel Carbonaceous Nano-Materials; Surface Plasmon and Near-Field Optics; and Optical Waveguides and Other Photonic Devices
The lab tries to construct and establish a new concept of semiconductor materials research, that is, semiconductor exciton photonics. Research includes growth techniques for low dimensional or nano-scale structures by atomic-scale controlling of surfaces and interfaces together with excitonic and photonic properties.
Research in the group involves searching for new optoelectrical phenomenons in atomic structures, which result from new quantum phenomenons as well as the co-existence of light and electrons. Design of new optoelectronics devices.