Product Sector: Environment → Waste Water Treatment
SA Envitech has developed and patented five technologies for water treatment.
All processes are based on the use of RECAMŽ. In the filtration process RECAMŽ is used like a filter media, meanwhile in all the other processes it is used to improve the oxidation of contaminants. The application of most innovative developments in the field of nanotechnology, and particularly the use of RECAMŽ, enables to emphasize and fully develop the benefits of advanced oxidation and contaminants absorption processes, reaching levels of efficiency and economy much higher than traditional water purification approaches.
All the processes are subject to international patents and are SA Envitech's property.
* possible to treat almost every kind of wastewater and a wide range of contaminants
* no sludge production
* system configuration that is both simple to build and modular
* low investment costs
* chemicals used only for pH corrections.
RECAMŽ (REactive CArbon Material) is a highly reactive and crystalline nanostructured material characterized by graphene planes with a particular disposition that give to this new innovative material particular properties in terms of contaminants removal and energy production.
RECAMŽ was invented by Eng. Ivano Aglietto and industrially developed by SA Envitech s.r.l. which is the brand owner and the first world producer of bulk quantities of nanostructured material for industrial purposes.
In its undisturbed state, RECAMŽ is made of flakes showing a cellular structure made of leaves or hollow-cushion formations which, in turn, are formed of cells separated by thin strands of flexible and collapsible granitic carbon. These cells have dimensions ranging from a few dozen, to hundreds of cubic microns. Each leaf consists of several hundred cells, which contribute to increase the specific surface of the product, made of hollow "cushions" which are bound together to form a sort of tube which rolls back on itself. The final result is a very interesting and particular disposition of the graphene planes.