nanotechnology, nanotechnology links, nanomaterials, nanomaterial database, nanotechnology news
Nanowerk article print Printer-friendly
Nanowerk article email E-mail this article
Nanowerk news digest Daily News Email Digest
Subscribe to Nanowerk Spotlight Subscribe to Spotlight
Nanowerk on Facebook Join us on Facebook
Nanowerk on Twitter Follow us on Twitter
Nanowerk News Feeds Nanowerk News Feeds
Bookmark Nanowerk Story
Nanotechnology Top 10 Articles
Posted: Feb 9th, 2010
Posted: Feb 8th, 2010
Posted: Feb 5th, 2010
Posted: Feb 3rd, 2010
Posted: Feb 1st, 2010
Posted: Jan 29th, 2010
Posted: Jan 27th, 2010
Posted: Jan 25th, 2010
Posted: Jan 21st, 2010
Posted: Jan 20th, 2010
Posted: Jan 19th, 2010
Posted: Jan 18th, 2010
Posted: Jan 15th, 2010
Posted: Jan 14th, 2010
Posted: Jan 13th, 2010
Posted: Jan 12th, 2010
Posted: Jan 11th, 2010
Posted: Jan 8th, 2010
Posted: Jan 7th, 2010
Posted: Jan 6th, 2010
Posted: Dec 23rd, 2009
Posted: Dec 22nd, 2009
Posted: Dec 21st, 2009
Posted: Dec 17th, 2009
Posted: Dec 16th, 2009
Posted: Dec 15th, 2009
Posted: Dec 14th, 2009
Posted: Dec 11th, 2009
Posted: Dec 9th, 2009
Posted: Dec 8th, 2009
Posted: Dec 7th, 2009
Posted: Dec 4th, 2009
Posted: Dec 3rd, 2009
Posted: Dec 2nd, 2009
Posted: Nov 30th, 2009
...more nanotechnology articles
 
Posted: May 12, 2008
High resolution surface potential imaging with ultrasharp carbon nanotubes
(Nanowerk Spotlight) With the advance of nanotechnologies the demand for ever more precise instruments that measure, map and manipulate details at the nanoscale increases as well. For instance, the study of potential distributions with nanoscale resolution becomes increasingly important. In the early days of atomic force microscopy (AFM) the scanning force microscope was used to measure charges, dielectric constants, film thickness of insulating layers, photovoltage, and electrical potential of a given surface. Then, in 1991, the concept of a scanning contact potential microscope was introduced, allowing the simultaneous measurement of topography and contact potential difference. Named the scanning surface potential microscope (SSPM) - also often referred to as Kelvin probe force microscope - this is a variation of the AFM that measures the electrostatic forces (potential) between the probe tip and the surface of a material.
The conducting tip and the sample are characterized by (in general) different work functions – i.e. the minimum energy needed to remove an electron from a solid to a point immediately outside the solid surface (the work function is an important property of metals). SSPM is conducted by a two pass technique. During the first pass line scan, the sample topography is imaged by normal tapping mode. The second pass raises the probe above the sample by a fixed distance (10 nm here) and measures the surface potential, following the previous-recorded topography to maintain a constant tip-sample distance.
Compared with other AFM techniques, the lateral resolution of traditional SSPM, from submicron down to 10 nm, is much lower. Furthermore, the SSPM-measured potential does not truly represent the local surface potential because all three parts of an AFM probe (tip apex, tip cone, and cantilever itself) can contribute to the long-range electrostatic forces that are central to SSPM operation.
Researchers have now solved this problem by mounting ultra sharp and high aspect ratio carbon nanotube (CNT) bundles onto the apex of an AFM tip, which effectively reduces the non-local electrostatic interactions. This technique markedly improves the SSPM technique in its spatial and potential resolution, making it a better tool for surface potential mapping at the nanoscale.
"Our findings provide direct experimental observations that ultra high aspect ratio AFM probes can enhance the potential contrast up to several factors for sub micron features" Dr. Minhua Zhao explains to Nanowerk. "That is to say, the underestimation of potential measurement using a standard AFM probe can be very severe. In the meantime, the ultra sharpness at the end of CNT bundles also improves the lateral resolution (<2 nm) of our SSPM measurement, the best results achieved at ambient condition so far."
Zhao, now a researcher at NIST/NIH, first-authored a recent paper about this work in Nanotechnology ("Ultrasharp and high aspect ratio carbon nanotube atomic force microscopy probes for enhanced surface potential imaging") while a postdoc in Prof. Bryan Huey's group at the University of Connecticut's Institute of Materials Science (IMS).
Surface potential mapping of membrane fragments
Surface potential mapping of purple bacteriorhodopsin (BR) membrane fragments with total gray scale contrast of 120 mV via (a) conventional AFM probes and (b) high aspect ratio CNT AFM probes. (c) Potential profile along the segmented line by a conventional AFM probe; the potential change is ∼8 mV between the two arrows in a distance of 47 nm. (d) Potential profile along the segmented line by a CNT AFM probe. The potential change is ∼32 mV between the two arrows in a distance of 47 nm. (Reprinted with permission from IOP Publishing)
The IMS team's motivation to conduct this work was that commercially available probes did not meet their needs. Zhao says that the aspect ratio of silicon AFM probes is not high enough, while CNT length of a commercial CNT AFM probe is too short to sufficiently reduce the non-local electrostatic interactions.
"The ultrasharpness at the end of CNT bundles is the key to high lateral resolution SSPM imaging" Zhao points out. "The enhanced and high resolution surface potential imaging that we achieved by ultrasharp and high aspect ratio CNT AFM probes is especially critical for nanoscale features of low potential contrast, with promising applications in the semiconductor industry and biotechnology such as dopant mapping, and label-free protein detection."
The CNT AFM probes were prepared using an AC dielectrophoresis technique (for more details see: "Control of Length and Spatial Functionality of Single-Wall Carbon Nanotube AFM Nanoprobes") where single-walled CNTs were first purified and shortened and then 'sharpened' to approximately 10 nm near the apex by gold/palladium sputtering (in fact, the entire probe is coated with AU/Pd to remove the distortion at the end of the bundle).
Zhao explains that, when a standard AFM probe is used, the SSPM-measured potential depends on the feature size – which is a problem when trying to identify a material based on its potential difference. In contrast, when an ultra high aspect ratio probe is used for potential measurement, it is much less sensitive to the feature size, making it possible to identify a material based on its surface potential.
High resolution AFM imaging
High resolution AFM imaging of self-assembled BRs on HOPG substrate by an ultra sharp and high aspect ratio CNT AFM probe. Image size is 500 nm. (a) 3D topography image. (b) 3D surface potential imaging. The protruding features in topography correspond to sinking ones in potential. (Reprinted with permission from IOP Publishing)
Another unique feature of the prepared CNT AFM probes is their ultra-sharpness at the end of CNT bundles. "Under certain conditions, there is only one SWCNT with diameter smaller than 1 nm protruding from the CNT bundles" says Zhao. "Hence, high spatial resolution SSPM images are also possible by these probes."
The potential applications for this work is very broad, such as dopant mapping and failure analysis of integrated circuit chip in semiconductor industry, label-free biomolecules detection for medical research, and nanoscale chemical imaging of materials based on SSPM-measured potential.
By Michael Berger. Copyright 2008 Nanowerk LLC
Share |
Subscribe! Receive a convenient email notification whenever a new Nanowerk Nanotechnology Spotlight posts.
Become a Spotlight guest author! Have you just published a scientific paper or have other exciting developments to share with the nanotechnology community? Let us know.
 
 
 
Privacy statement | Terms of use | Contact us | Home | Sitemap | Advertise with us
The contents of this site are copyright ©2010, Nanowerk. All Rights Reserved