Veeco Instruments Inc. announced today that Shandong Raysun Huaguang Optoelectronics Co., Ltd. of China has qualified Veeco's gallium nitride and arsenic phosphide metal organic chemical vapor deposition systems for high volume production of red and blue high-brightness light emitting diodes.
Rudolph Technologies, Inc. and SEMATECH, the global consortium of leading chipmakers, announced today that Rudolph has joined SEMATECH's 3D Interconnect Program at the College of Nanoscale Science and Engineering of the University at Albany.
Zeiss has overcome the challenges of imaging deep inside living tissues with the launch of the LSM 7 MP, a purpose-built multiphoton laser scanning microscope that, for the first time, incorporates two separate scanners.
QD Vision, developer of nanotechnology-based products for lighting and displays, today announced it has been selected by the Department of Energy (DoE) to receive more than $700,000 in funding for a project that will significantly contribute to the development of enhanced solid state lighting technologies.
Sunfilm, AG and Applied Materials, Inc., today announced that the world's first tandem junction SunFab Thin Film Line installed at Sunfilm's Grossroehrsdorf facility achieved factory acceptance on April 14, 2009.
Early Warning today displayed its Biohazard Water Analyzer which offers the next generation in microbial testing. Using a unique combination of advanced technologies, the Analyzer goes beyond lab culturing of indicator coliforms and directly measures individual species of pathogenic bacteria, protozoa and viruses in the same test.
Grace Semiconductor Manufacturing Corporation, one of the leading semiconductor foundries in China, announced delivery of its advanced 0.18 micron RFCMOS process design kit through an exclusive 0.18 micron RFCMOS collaboration with Sentinel IC Technologies.
In a move that signals a firm and ongoing commitment to advanced semiconductor technology leadership, IBM, Chartered Semiconductor Manufacturing Ltd., GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28-nanometer (nm), high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology.