Open menu
Nanowerk

Nanotechnology General News

The latest news from academia, regulators
research labs and other things of interest

Nanotechnology News – Latest Headlines

Imec makes significant contribution to the 2010 IEDM meeting

A record number of 16 papers with imec authors has been accepted for this year's IEEE International Electron Devices Meeting (IEDM), being held Dec 6 - 8 in San Francisco. Both ITRS-related as well as More-than-Moore-related research papers have been accepted.

Posted: Aug 19th, 2010

Read more

Awareness-raising workshop for developing and transition countries on nanotechnology/manufactured nanomaterials

These workshops brief participants on what is nanotechnology and manufactured nanomaterials, what are some of the potential risks from nanotechnologies and manufactured nanomaterials (e.g. to the environment or human health) and benefits (e.g. decreased costs of low-maintenance products, or use in environmental remediation) of nanotechnology and nanomaterials.

Posted: Aug 19th, 2010

Read more

University Poster Exhibition - Call for abstracts - Technology World in partnership with UK Nanoforum

Technology World in partnership with UK NanoForum will bring over 350 senior international delegates together with the best of the UK's Science and Technology community. With a focus on trade, investment and collaborations, this will be a networking forum for industry, academia, technology purchasers and those seeking to develop joint ventures and future partnerships.

Posted: Aug 19th, 2010

Read more

Understanding gate oxide trapping - one electron at a time

Using a new technique, researchers from imec, TU Vienna, and Infineon have shown that both electron and hole capture and emission times in SiO2 and HfO2 dielectrics are strongly thermally activated. The new technique, Time Dependent Defect Spectroscopy (TDDS), can be used to study the capture and emission times of single oxide defects over a very wide time range.

Posted: Aug 19th, 2010

Read more

New metrology for tuning the etch rate uniformity in plasma etch processes

Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes use of PVx2 sensor wafers. For ion-assisted etch processes, the use of this PVx2-based method for ERU tuning results in lot-turn time savings of up to 80% compared to conventional etch rate uniformity tests.

Posted: Aug 19th, 2010

Read more

RSS Subscribe to our Nanotechnology Research News feed

Nanowerk on Facebook Engage with our Nanotechnology News on Facebook