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Postdoctoral Researcher Electron Channeling-based Defect Metrology for Beyond-Si Semiconductors (1-1y)
Imec is the world-leading research and innovation hub in nanoelectronics and digital technologies. The combination of our widely acclaimed leadership in microchip technology and profound software and ICT expertise is what makes us unique. By leveraging our world-class infrastructure and local and global ecosystem of partners across a multitude of industries, we create groundbreaking innovation in application domains such as healthcare, smart cities and mobility, logistics and manufacturing, and energy. As a trusted partner for companies, start-ups and universities we bring together close to 3,500 brilliant minds from over 70 nationalities. Imec is headquartered in Leuven, Belgium and also has distributed R&D groups at a number of Flemish universities, in the Netherlands, Taiwan, USA, China, and offices in India and Japan. All of these particular traits make imec to be a top-class employer. To strengthen this position as a leading player in our field, we are looking for those passionate talents that make the difference! Currently we are looking for a motivated Postdoc Electron Channeling-based Defect Metrology for Beyond-Si Semiconductors We offer a challenging position for two years in an advanced high-tech environment and in an international, interdisciplinary team. Our flexible, progressive and informal working environment offers you a range of possibilities to take initiative and show responsibility. This is your opportunity to contribute to the technology that will determine the society of tomorrow. imec supports and guides you in this process; not only with words but with concrete actions. Through imec.academy, 'our corporate university', we offer various training possibilities. Your valuable contribution and that of your colleagues make imec a top player in its field. Your energy and commitment are therefore appreciated by means of an attractive and competitive salary.
The heterogeneous integration of Germanium (Ge) and III-V compounds (InGaAs, InAlAs) can facilitate the design of next generation transistors operating at reduced supply voltage. Moreover, direct bandgap materials are promising building blocks for tunnel-FETs as well as photonics devices such as lasers and modulators. Although the aforementioned materials can be grown epitaxially on Si substrates, the large lattice mismatch can lead to extended defects such as dislocations and stacking faults. As the latter can deteriorate the final device performance and reliability, it is of utmost importance to assess the crystalline quality of epitaxial materials and device structures in order to provide adequate feedback to process and device integration engineers. Although extended defects can be analyzed in great detail using transmission electron microscopy (TEM), the low defect density levels (< 105 defects/cm2) one is targeting in routine production processes as well as its destructive nature, make TEM of limited usefulness for in-line monitoring. Electron channeling contrast imaging (ECCI) on the other hand is inherently non-destructive and can be used to investigate large areas thereby facilitating a lower detection limit. Notwithstanding these early successes, ECCI is still far from a fast, quantitative metrology concept. Recently Imec has engaged with an SEM manufacturer to explore in more detail this concept targeting to derive solutions for sensitivity, quantification, defect identification and classification as well as speed of the analysis. Hence, in this Postdoc project we would like to explore the basics of ECCI and its application towards future nanoelectronic device structures such as FinFETs and nanowires. The project involves the understanding on how electron beams interact with defects and crystals such that the effects of electron diffraction and channeling can be interpreted relative to the presence of different defect types (threading dislocations, stacking faults) in the relevant semiconductor materials (Ge, III/V). Ultimately we will be able to identify optimum imaging conditions to visualize and analyze defects in various fin and nanowire structures experimentally. Improved measurement concepts need to be designed and explored in order to reach increased signal-to-noise ratio’s and reduced measurement times. This postdoctoral position is funded by imec through KU Leuven. Because of the specific financing statute which targets international mobility for postdocs, only candidates who did not stay or work/study in Belgium for more than 24 months in the past 3 years can be considered for the position (short stays such as holiday, participation in conferences, etc. are not taken into account).
You have a Phd and are an expert in electron microcopy and crystallography, preferentially with experience related to semiconductor materials. - You can easily integrate in an international team of professionals. - You have excellent English communication and reporting skills.