Posted: May 14, 2009

Oxford Instruments Announces Launch of New CrystalFlex HVPE Reactor

(Nanowerk News) Oxford Instrument has announced the launch of CrystalFlex. This multi-wafer Hydride Vapour Phase Epitaxy (HVPE) reactor provides superb epitaxial growth control, and offers a cost effective route for the production of high quality, crack free epitaxial GaN, AlGaN and AlN single crystal materials.
As a world leading company we boast over 25 years experience in the development of HVPE processes and techniques for the production of novel Group III nitrides compound semiconductors.
The equipment is designed for R&D or full scale production of Group III nitrides with the focus on process stability, reproducibility, and optimal source materials usage. The flexible reactor configuration enables end users to grow a variety of products ranging from GaN to AlN and AlGaN with thickness from a few microns to a few millimeters.
The leading edge CrystalFlex HVPE tool provides a cost effective route for the production of high quality epitaxial GaN, AlGaN and AlN single crystal materials.
CrystalFlex HVPE applications
  • Visible and UV LEDs
  • Laser diodes
  • RF electronic devices
  • Power electronic devices
  • Process Improvement
  • Proprietary gas injector design for uniform gas flow
  • High capacity source boat design for increased uptime
  • Extended thermal flat zone for excellent thickness uniformity
  • Process support by a highly experienced team of scientists with in-depth process knowledge of HVPE
  • The HVPE Process
    The HVPE process for the growth of Group III nitrides is based on two-step thermodynamic-driven, chemical reaction between metallic sources of (Ga, Al, and In), HCl and ammonia at temperatures of 1000 - 1100°C and atmospheric pressure. It provides a simple and cost effective way to grow Group III nitrides.
    Source: Oxford Instruments (press release)
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