Posted: September 15, 2009

Nanjing University to Research GaN UHB-LEDs With New AIXTRON MOCVD Tool

(Nanowerk News) AIXTRON AG announced today an order for a new MOCVD tool from Nanjing University's Institute of Optoelectronics (IOE) at Yangzhou. The order is a single AIX 2400G3 HT MOCVD system for development of ultra-high-brightness (UHB) InGaN/GaN-based LEDs and has been delivered in the first half of 2009.
Dr. Chen Peng, Professor and Director of IOE, comments: "After a complete investigation and in consultation with local experts, the AIXTRON MOCVD system was confirmed as the first choice for our GaN LED research projects. We are building new capacity and exploring leading LED science and technology. The system satisfies our needs with the efficiency and stability."
Based on the Collaboration Agreement between Nanjing University and the Yangzhou local government, the Institute of Optoelectronics at Yangzhou was established in Dec. 2007 as a research organization. It is located in Yangzhou High-tech Venture Services Center and has a work space of over 1500 sqm. Focusing on the research of epitaxial growth, processing and device development of novel optoelectronic devices, the institute is one of the most important R&D centers for developing High-Tech industry in Yangzhou City.
Source: AIXTRON (press release)
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