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Posted: July 21, 2008
Innovative Silicon to Highlight Its Z-RAM Technology at MemCon
(Nanowerk News) Innovative Silicon Inc. (ISi), developer of the Z-RAM® zero-capacitor floating body memory technology, today announced that it will be delivering a memory presentation, participating on a panel and exhibiting at the MemCon 2008 show that is scheduled to take place at the Hyatt Regency Santa Clara in Calif. from July 21-24, 2008.
Details related to ISi’s presence at MemCon are as follows:
ISi is exhibiting in booth # 8.
Paper Presentation: Wednesday, July 23 from 2:00 p.m. -2:30 p.m. Jeff Mitchell, ISi’s director of technical marketing, will give a paper titled “Z-RAM: A better DRAM.” Participants will have the opportunity to hear Mitchell discuss the challenges for scaling DRAM as semiconductor designs migrate to 32nm and below and why floating body memory is the natural evolution of DRAM itself.
Panel Presentation: Thursday, July 24 from 10:30 a.m. - 11:30 a.m. Dr. Wayne Ellis, director of DRAM technology at ISi, will participate on a panel titled “Can DRAM Makers Get Power, Cost and Ground-Rules Down without Changing Basic Technology Horses?”
At MemCon, industry luminaries from the consumer electronics and mobile industries, set-top box, and computer vendors, as well as leading memory and storage developers and manufacturers discuss their technology roadmaps, system requirements, and their visions of the future in tomorrow's consumer products. Additionally, suppliers of DRAM, flash memory and storage solutions, memory controllers, and other ecosystem players participate in the exhibition.
About Innovative Silicon
Innovative Silicon, Inc. (ISi) is the inventor and licensor of the Z-RAM® ultra-dense memory technology for stand-alone DRAM and embedded memory applications. Z-RAM is the world’s lowest-cost semiconductor memory technology – simpler to manufacture than DRAM, and a fraction the size of SRAM. ISi and the Z-RAM technology have received numerous industry awards, including the World Economic Forum’s selection of ISi as a 2008 Technology Pioneer, and IEEE Spectrum Magazine’s selection of Z-RAM as the 2007 “Emerging Technology Most Likely to Succeed.” Z-RAM is a “Zero Capacitor,” true single-transistor floating body memory that eliminates the complex capacitor found in today’s DRAM technologies – a fundamental roadblock to Moore’s Law of scaling. Z-RAM provides semiconductor manufacturers a solution for nanoscale manufacturing processes that can dramatically lower semiconductor costs. The Z-RAM memory technology has been licensed by Hynix Semiconductor for use in its DRAM chips, and by AMD for use in microprocessors. Since 2003, the company has closed three funding rounds totaling $47 million, received over 30 patents on the technology, developed test chips in multiple technologies from 90nm to 32nm, and has established global R&D, engineering and support centers in Europe, Asia and North America. For more information see www.z-ram.com.
Z-RAM is a registered trademark of Innovative Silicon Inc. All other trademarks and registered trademarks are the property of their respective owners.