Posted: November 7, 2008

FEI Releases New TrueCrystal Analysis Package for Semiconductor Manufacturing

(Nanowerk News) FEI Company, a provider of atomic-scale imaging and analysis systems, has released its new TrueCrystal Strain Analysis package that can be installed on a Titan or Tecnai scanning/transmission electron microscope (S/TEM) system.
FEI stated that the new, automated strain analysis package allows engineers to achieve highly accurate measurements in a fraction of the time of existing techniques.
"Silicon strain engineering is an important process innovation in advanced semiconductor manufacturing; it allows for improved device performance and efficiency at advanced technology nodes. Currently, only TEM has proven capable of measuring these induced lattice strains at the required spatial resolution," said Joseph Race, product marketing manager, Electronics Division at FEI. "TrueCrystal Strain Analysis is a complete analytical package for the determination of strain along any line in a crystalline sample, at the nanometer level."
Tony Edwards, vice president and general manager of FEI's Electronics Division, said, "FEI's TrueCrystal Strain Analysis package is an example of our corporate commitment to providing customers with comprehensive, application-specific solutions that aim to maximize TEM productivity, reduce data acquisition times and lower overall cost of analysis."
TrueCrystal leverages a combination of nano-beam diffraction (NBD) in the TEM, and an off-line data analysis package, to generate the high-quality data required for advanced strained silicon process development.
Source: FEI (press release)
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