Intel awards Irish nanoscientists for their role in industry success

(Nanowerk News) Intel has officially recognised CRANN, the SFI-funded nanoscience institute based in Trinity College Dublin, for the impact of its excellent research collaborations on Intel's work since 2003.
Dr. Robert Chau, Intel Senior Fellow and one of the key technologists within Intel globally, will this evening present an award to CRANN, for the role its researchers have played in helping Intel to develop advanced technologies.
The award is official recognition by Intel of the role its research has played in the company's successes to date. During almost a decade of collaboration, CRANN has built a very strong relationship both with Intel Ireland' s advanced manufacturing capability and its "Components Research" unit, based in Portland Oregon, which is responsible for the development of the next generation Intel technologies.
Speaking in advance of his lecture, Dr Robert Chau, Intel Senior Fellow, Technology and Manufacturing Group and Director, Transistor Research and Nanotechnology said. "I am delighted to have the opportunity to visit CRANN and TCD." He went on to say that Intel has enjoyed "very productive research collaborations with CRANN since its foundation in 2003 across a range of topics".
He continued, "the research has been focused on technologies that could assist in the advancement of 'Moore's Law' which is the fundamental principle which enables innovation in computing technology. Intel looks forward to continuing its collaboration with CRANN into the future. "
Eamonn Sinnott, General Manager of Intel Ireland and VP of Technology and Manufacturing Group, said, "I am honoured to be hosting the visit of one of Intel's leading technologists, Robert Chau, and would like to join Robert in recognising the strong partnership from CRANN and TCD in the important area of nanotechnology research." Mr. Sinnott said that he would also like to recognise CRANN's track record in providing the kind of highly skilled Phd graduates which are required to meet the needs of advanced manufacturing at Intel Ireland.
Leonard Hobbs, Research Manager at Intel Ireland, complimented the CRANN team at both TCD and UCC for the their ability to work with industry in responding to future challenges and for partnering with Intel to find the kinds of breakthroughs required to continue the device scaling into the years ahead. Mr. Hobbs went to say, " CRANN's excellent people and research infrastructure, coupled with their industry orientation, are key ingredients to continued success".
Professor John Boland, Director of CRANN, said, "As Ireland's foremost nanoscience institute, CRANN works to develop industry-partnerships in sectors such as technology, pharmaceuticals and energy among others."
"Our partnership with Intel has been in existence for 8 years and has during this time, been mutually beneficial. Intel has challenged us to research new technologies, new devices and new functionalities, all-the-while expanding our expertise."
"Intel has always been committed to Ireland, as a significant employer, continually investing in Ireland - including in research. Exemplar research capabilities, such as those in CRANN, will continue to attract and maintain such inward investment. I am delighted to accept this award on behalf of CRANN and I look forward to developing our partnership with Intel into the future."
In terms of employment opportunities, Intel's collaboration with CRANN remains strong.
This year, a graduate from CRANN was recruited into Components Research in Oregon and is now shortly returning to the institute as an Intel Researcher-in-Residence. This is the first Components Research staff placement from Intel USA in Ireland and highlights the growing capabilities within the research community in Ireland. In addition, within the last six months Intel has hired 15 new employees with PhDs from CRANN.
The Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) is Trinity College Dublin's largest research institute and a Science Foundation Ireland (SFI) funded Centre for Science, Engineering and Technology (CSET). CRANN is focused on delivering world leading research and innovation ? through extensive proactive collaborations with industry and through commercialisation of intellectual property. Since its foundation, CRANN has obtained ?200M of competitive funding from Government, Industry, the European Union and Philanthropy. CRANN is comprised of a team of over 300 researchers, led by 18 Principal Investigators (PIs), each of whom is an internationally recognised expert in their field of research. It is interdisciplinary working in partnership with the Schools of Physics, Chemistry, Pharmacy and Pharmaceutical Science, Medicine and Engineering based at Trinity College Dublin as well as the School of Chemistry at University College Cork.
About Robert Chau
Robert S. Chau is an Intel Senior Fellow and director of transistor research and nanotechnology in Intel's Technology and Manufacturing Group. Chau is responsible for directing research and development in advanced transistors and gate dielectrics, process modules and technologies, and silicon integrated processes for microprocessor applications. He is also responsible for leading research efforts in emerging nanotechnology for future nanoelectronics applications.
Chau joined Intel in 1989, became an Intel Fellow in 2000 and an Intel Senior Fellow in 2005. During his career at Intel he developed nine generations of Intel gate dielectrics, including the high-K/metal-gate, along with many transistor innovations and process technologies used in various Intel manufacturing processes and microprocessor products. He also introduced many new process modules and novel device nanotechnologies for Intel's future logic processes.
Chau has earned 7 Intel Achievement Awards. He was the co-recipient of the 2008 SEMI Award for North America for the development of Intel's 90nm strained silicon technology, and the 2008 EDN (Electronics Design, Strategy, News) "Innovator of the Year" award for the development of Intel's 45nm high-k metal gate transistor technology.
Source: CRANN