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Posted: Sep 17, 2012
Imec prominently presents at IEDM 2012
(Nanowerk News) Imec announced today a high number of engagements at this year’s IEEE International Electron Device Meeting (IEDM 2012) in San Francisco (USA), December 8-12, 2012. Solidifying its leading position as a global R&D center solving key challenges of the International Technology Roadmap for Semiconductors (ITRS), imec will present one plenary talk, feature two invited presentations, deliver one tutorial, and present 9 papers from imec researchers as first authors and 5 papers as co-author.
“We are delighted by the IEDM committee’s recognition, which not only rewards our researchers, but proves the value of their work,” said Luc Van den hove, CEO at imec. “It is imec’s ambition to stay at the forefront of research to further support the global semiconductor industry with innovative solutions.”
Imec’s papers at IEDM 2012 include:
Plenary—Luc Van den hove, CEO at imec—Ultimate Transistor and Memory Technologies: Core of a Sustainable Society
Invited paper—Kurt Ronse et al. —Opportunities and Challenges in Device Scaling by the Introduction of EUV Lithography
Invited paper—Eddy Simoen et al. —Insights in low frequency noise of advanced and high-mobility channel transistors
Tutorial—Mustafa Badaroglu—Scaling Challenges Analog Electronics
- Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories, Toledano-Luque et al.
- Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation, Chen et al.
- Ultra thin hybrid floating gate and high-k dielectric as IGD enabler of highly scaled planar NAND flash technology, Kar et al.
- Beyond interface: the impact of oxide borde traps on InGaAs and Ge n-MOSFETs, Lin et al.
- Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs, Togo et al.
- Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14nm node and beyond, Eneman et al.
-Impact of Through Silicon Via Induced Mechanical Stress on Fully Depleted Bulk FinFET
Technology, Guo et al.
- Standard cell level parasitic assessment in 20nm BPL and 14nm BFF, Schuddinck et al.
More than Moore
- UHF IGZO Schottky diode, Chasin et al.
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China, India and Japan. Its staff of about 1,900 people includes more than 500 industrial residents and guest researchers. In 2010, imec's revenue was 285 million euro. Further information on imec can be found at www.imec.be.
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