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Scientists take plasmon lasers out of deep freeze

Researchers at the University of California, Berkeley, have developed a new technique that allows plasmon lasers to operate at room temperature, overcoming a major barrier to practical utilization of the technology.

Posted: Dec 20th, 2010

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High-quality III-V layers on Si(001) pave the way to high-performance Ge/III-V CMOS

Imec has demonstrated the selective area growth of high-quality InP layers on 200mm Si(001) wafers. Key to avoiding the typically formed and unwanted antiphase boundaries (APBs) is the creation of atomic steps on a thin Ge buffer layer. This result is a major step forward towards the fabrication of high-performance Ge/III-V CMOS devices and the integration of optoelectronic devices on a Si chip.

Posted: Dec 18th, 2010

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Innovative method to fabricate complex 3D microstructures

Researchers from imec and the University of Michigan have reported a new technology to fabricate complex three-dimensional microstructures, with intricate bends, twists, and multidirectional textures, starting from vertically aligned carbon nanotubes.

Posted: Dec 18th, 2010

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Process flow for the biocompatible packaging of medical implants

Imec has derived a process flow concept for the packaging of medical implants that meets the requirements for miniaturization, biocompatibility and safety. The proposed solution is a promising alternative for the currently used rigid packages that tend to enhance foreign body reactions.

Posted: Dec 18th, 2010

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NO2 gas sensor based on vertically-grown InAs nanowires

Imec and Holst Centre have developed an innovative sensor for measuring ultra-low concentrations of NO2. Such sensors are important for applications that monitor environmental pollution resulting from traffic, and in general, from all combustion motors. The sensor's active components are arrays of grown vertical InAs nanowires.

Posted: Dec 18th, 2010

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Study to avoid stress impact of 3D stacking on IC performance

At IEDM 2010, imec and its partners presented a study of the stress-induced impact of through-silicon via (TSV) processing on the performance of high-k/metal-gate CMOS transistors and circuits. This study is a first of its kind; the results and the approach that was followed are a foundation for stress-aware design with dedicated design rules. This will allow to precisely delineate keep-out zones, and thus to save valuable silicon area.

Posted: Dec 18th, 2010

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Organic electronic ratchets doing work

Researchers at Eindhoven University of Technology and the COBRA research institute in Eindhoven have succeeded in causing electron transport using an electronic 'ratchet'. This is the first time that usable powers have been generated at room temperature with a device of this kind. The finding opens the possibility of a new kind of wireless drive for microelectronic circuits.

Posted: Dec 17th, 2010

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How do you cut a nanotube? Lots of compression

Researchers at Brown University and in Korea have described the dynamics behind cutting single-walled carbon nanotubes, cylindrical structures just 1/50,000th the width of a human hair. The tubes are compressed by potent sonic booms, causing them to buckle at certain points at helical, 90-degree angles. The finding could lead to better-quality nanotubes for potential use in automotive, electronics, optics and other fields.

Posted: Dec 17th, 2010

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