ASM International will bestow its most prestigious honors upon 15 leaders in materials science and engineering at MS+T 2011, the Materials Science and Technology conference in Columbus, Ohio, on Oct. 18. The awards recognize lifetime achievement or breakthroughs in understanding and use of materials such as metals, ceramics, polymers and nanomaterials.
Sep 29th, 2011
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Analog - rather than digital - circuits could enable models of biological systems that are more efficient, more accurate and easier to build.
Sep 29th, 2011
Read moremicroTAS 2011 conference, the premier international event for reporting research in microfluidics, nanotechnology and detection technologies for life science and chemistry, University of Cincinnati researchers will present a simple, low-cost, method for separating and safely collecting concentrated volumes of fragile prostate cancer cells.
Sep 28th, 2011
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Physicists at the U.S. Department of Energy's Ames Laboratory are studying the interaction of materials that are promising for use in nanoscale electronics: graphene and different types of metals. The team has discovered the rare-earth metals dysprosium and gadolinium react strongly with graphene, while lead does not.
Sep 28th, 2011
Read moreRostfreie Staehle sind aus unserer modernen Industriegesellschaft nicht mehr wegzudenken.
Sep 28th, 2011
Read moreProfessor Michael Coey receives RDS/Intel Prize for Science Research and Communication
Sep 28th, 2011
Read moreGovernor Andrew M. Cuomo today announced that New York State has entered into agreements providing for investments valued at a total of $4.4 billion over the next five years from five leading international companies to create the next generation of computer chip technology.
Sep 28th, 2011
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Nanometer-sized bubbles containing the gases hydrogen and oxygen can apparently combust spontaneously, although nothing happens in larger bubbles. For the first time, researchers have demonstrated this spontaneous combustion.
Sep 28th, 2011
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Combining carbon dioxide sorbents with gold nanoparticle catalysts makes manufacturing ultrapure hydrogen gas easier than ever.
Sep 28th, 2011
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Advanced electronics beckon thanks to self-assembling templates that allow the creation of nanoscale features on silicon wafers.
Sep 28th, 2011
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Similarities between the electronic states of molecules and the optical properties of gold nanostructures aid the development of new photonic devices.
Sep 28th, 2011
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Diamonds may be best known as a symbol of long-lasting love. But semiconductor makers are also hoping they'll pan out as key components of long-lasting micromachines if a new method developed at the National Institute of Standards and Technology (NIST) for carving these tough, capable crystals proves its worth.
Sep 27th, 2011
Read moreResearchers from Northwestern University have developed a carbon-based material that could revolutionize the way solar power is harvested. The new solar cell material - a transparent conductor made of carbon nanotubes - provides an alternative to current technology, which is mechanically brittle and reliant on a relatively rare mineral.
Sep 27th, 2011
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Scientists at the University of Massachusetts Amherst report that for the first time they have designed a much simpler method of preparing ordered magnetic materials than ever before, by coupling magnetic properties to nanostructure formation at low temperatures.
Sep 27th, 2011
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A new paper by collaborators at Rice University and Hong Kong Polytechnic University demonstrates the possibility that tiny strips of graphene can stand tall on a substrate with a little support. This leads to the possibility that arrays of graphene walls could become ultrahigh density components of electronic or spintronic devices.
Sep 27th, 2011
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Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices. The technology combines silicon nanowires with a "ferroelectric" polymer, a material that switches polarity when electric fields are applied, making possible a new type of ferroelectric transistor.
Sep 27th, 2011
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