Silicon has been the most successful material of the 20th century, with major global industries and even a valley named after it. But silicon may be running out of steam for high performance/low power electronics. As silicon strains against the physical limits of performance, could a material like InGaAs provide enough of an improvement over silicon that it would be worth the expense in new equipment lines and training to make the switch worthwhile?
A new research platform uses a laser to measure the nanomechanical properties of tiny structures undergoing stress and heating, an approach likely to yield insights to improve designs for microelectronics and batteries.
Recent experiments have confirmed that a technique developed several years ago at the National Institute of Standards and Technology (NIST) can enable optical microscopes to measure the three-dimensional (3D) shape of objects at nanometer-scale resolution - far below the normal resolution limit for optical microscopy.
One of nature's mysteries is how plants survive impact by the huge amounts of energy contained in the sun's rays, while using this energy for photosynthesis. The hypothesis is that the light-absorbing proteins in the plant's blades quickly dissipate the energy throughout the entire protein molecule through so-called protein quakes. Researchers have now managed to successfully 'film' this process.
Researchers have demonstrated that two of these single-layer semiconductor materials can be connected in an atomically seamless fashion known as a heterojunction. This result could be the basis for next-generation flexible and transparent computing, better light-emitting diodes, or LEDs, and solar technologies.
Scientists have reported the first experimental observation of ultrafast charge transfer in photo-excited MX2 materials. The recorded charge transfer time clocked in at under 50 femtoseconds, comparable to the fastest times recorded for organic photovoltaics.