Center for Spintronics and Biodetection conducts research on the frontiers of the second-generation spintronics involving electron spin transport, pure spin currents, coherent spin dynamics, and spin-dependent noise phenomena in multilayered nanostructures consisting of ferromagnets, metals, insulators, and semiconductors. In addition, spintronic devices are also investigated as elements of sensors for biomolecules.
Research within the department spans a wide range of nanotechnology-related fields, from the synthesis and processing of nanotubes and nanoparticles to their employment in composite materials and development of multifunctional applications. Both experimental and theoretical research on processing, characterization and predictive modeling is being conducted. The Department was awarded a Nanoscale Undergraduate Education (NUE) program by the National Science Foundation to provide opportunities for undergraduate research and generate a framework for the integration of nanotechnology across the engineering curriculum.
CNBS will harness select world-class resources in nano-bio technology to produce tools and methodologies for early diagnosis of diseases and timely detection and intervention for chemical and bioterrorism threats, leading to high-value healthcare and homeland security deliverables. CNBS is one of UF's two new state-funded Centers of Excellence.
The Nanoscience Institute for Medical and Engineering Technology (NIMET) is an umbrella organization that focuses and coordinates research and educational activities at the University of Florida in the fields of nanoscale science and nanotechnology.
The SWAMP (Structural Analysis with Advanced Materials Processing) Center in the College of Engineering at the University of Florida features interdisciplinary activities aimed at understanding, optimizing, and developing new techniques for the manufacture of advanced materials. The center is devoted to understanding and modeling fundamental properties and reliability of the materials and devices involved in micro- and nano-electronics in both Si, Ge and compound semiconductors including the III-Nitrides and InGaAs.