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AN00164 - Screw dislocations in GaN

Organic semiconductors obtained a lot of interest during the last years, due to their suitability for organic thin film transistor (OTFT) displays. During the last decade the speed of such displays, could be increased by more than a factor of 10000. This was achieved by increasing the mobility of electrons in these films.
self-assembled monolayers Image size 11x11 µm, Z-range 3 nm
Download: AN00164 Screw dislocations in GaN.pdf

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Screw dislocations in GaN

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