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Posted: Jun 03, 2017
Overcoming hysteresis in carbon nanotube field effect transistors
(Nanowerk News) Researchers have developed a facile approach to overcoming hysteresis
in carbon nanotube field-effect transistors (CNFETs) to <0.5% of the gate-source voltage (VGS) sweep range: rather than to eliminate traps, they aim to reduce the effect that traps have on the carbon nanotubes (CNTs).
In their work, the authors show that hysteresis is naturally overcome by scaling the gate dielectric thickness in CNFETs, even without optimizing the interfaces to minimize traps.
However, they write that despite reducing hysteresis, large subthreshold swing remains a challenge and is attributed to single-CNT threshold voltage (VT) variations.
"The VT variations cannot be entirely attributed variations in CNT diameter, but rather additional non-ideal aspects of device processing contribute a non-negligible portion," the scientists conclude. "Therefore, the next major challenge is to control single-CNT VT to achieve steep subthreshold swing for multiple-CNT CNFETs, which will require further work to improve the interface qualities.