NanoBridge is the resistive switch where resistance changes between ON and OFF states when a nanometer scale Cu bridge is precipitated or dissolved into the solid electrolyte. When placed between the two Cu interconnects of LSI, NanoBridge can connect or disconnect the two interconnects by applying a bias voltage. Therefore, circuitry can be configured after manufacturing in order to implement logic functions.
Feb 23rd, 2011
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Texas Instruments Incorporated (TI) and the Massachusetts Institute of Technology (MIT) today presented a joint research paper detailing design methodologies for a 28-nanometer mobile applications processor at the 2011 International Solid-State Circuits Conference (ISSCC).
Feb 23rd, 2011
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The new book, "Scanning Probe Microscopy of Functional Materials", edited by Dr. Sergei Kalinin of the Oak Ridge National Laboratory and Alexei Gruverman of the University of Nebraska, describes cutting-edge nanoscale imaging and spectroscopy advances in the field of atomic force/scanning probe microscopy.
Feb 22nd, 2011
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FLEX is designed as a multi-functional tool able to acquire images and spectra from the deep UV to the NIR. Offering transmission, reflectance, fluorescence as well as a host of other features, FLEX is a powerful addition to the laboratory.
Feb 22nd, 2011
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EV Group, a leading supplier of wafer-bonding and lithography equipment for the advanced semiconductor and packaging, MEMS, silicon-on-insulator (SOI) and emerging nanotechnology markets, today announced the latest addition to its portfolio of products created to optimize the manufacture of high-brightness light-emitting diodes (HB-LEDs), compound semiconductors and power electronics.
Feb 22nd, 2011
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FEI and CEA-Leti today announced the companies have entered into a three year agreement to characterize advanced semiconductor materials for the 22nm technology node and beyond.
Feb 22nd, 2011
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CEA-Leti today announced a multi-partner project to demonstrate high-alignment-accuracy chip-to-wafer structures made by direct metallic bonding. Such structures are required for high-performance 3D integrated circuits and could enable a wide range of applications in microelectronics as well as in optoelectronics or MEMS.
Feb 22nd, 2011
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On February 8, 2011 the President of the Russian Federation Dmitry Medvedev attended the exhibition "The history of Russian innovations: from periodic table to graphene" that was held in the Polytechnical Museum and opened the 1st Russian Festival of Science. SOLVER NEXT was presented and aroused significant interest of the President.
Feb 22nd, 2011
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RUSNANO and The Dow Chemical Company through its wholly owned subsidiary Dow Europe GmbH have signed a memorandum of understanding to evaluate potential cooperation in fast-growing areas such as energy efficiency, infrastructure, light-weight materials, and life sciences.
Feb 22nd, 2011
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Nitto Denko Asia Technical Centre (NAT) will be expanding its Singapore base to include a prototyping centre in Singapore. The centre will be pioneered at A*STAR's Institute of Materials Research and Engineering (IMRE) under a unique Lab-in-RI programme.
Feb 22nd, 2011
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Amtech Systems, Inc., a global supplier of production and automation systems and related supplies for the manufacture of solar cells, today announced it has completed its previously announced acquisition of 55% ownership of Kingstone Technology Hong Kong Limited, a Hong Kong-based holding company that owns 100% of Kingstone Semiconductor Company Ltd, a Shanghai-based technology company specializing in ion implant solutions for the solar and semiconductor industries.
Feb 22nd, 2011
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AIXTRON SE today announced a new MOCVD reactor order from existing customer Ubilux of Tainan County, Taiwan. The order is for two AIXTRON CRIUS II deposition systems in the 55x2-inch configuration which will be used to expand the company's production capacity for GaN-based HB LEDs.
Feb 22nd, 2011
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President Barack Obama finally got to see his atoms, courtesy of Intel and FEI's Titan transmission electron microscope.
Feb 21st, 2011
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GaN based epitaxy on silicon (Si) is very challenging because of the thermal mismatch between GaN and Si, which causes extreme tensile stress after cooling. For such applications LayTec's EpiCurveTT is the tool of choice for a precise in-situ strain engineering.
Feb 21st, 2011
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Development of a unified hardware/software design platform for complex systems-on-chip
Feb 21st, 2011
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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the development of 1 gigabit (Gb) mobile DRAM with a wide I/O interface, using 50 nanometer class process technology. The new wide I/O mobile DRAM will be used in mobile applications, such as smartphones and tablet PCs.
Feb 21st, 2011
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