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Nanotechnology General News

The latest news from academia, regulators
research labs and other things of interest

First images of Landau levels revealed

Physicists have directly imaged Landau Levels - the quantum levels that determine electron behaviour in a strong magnetic field - for the first time since they were theoretically conceived of by Nobel prize winner Lev Landau in 1930.

Posted: Oct 1st, 2012

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Solar cell consisting of a single molecule

Researchers have developed a method to measure photocurrents of a single functionalized photosynthetic protein system. The scientists could demonstrate that such a system can be integrated and selectively addressed in artificial photovoltaic device architectures while retaining their biomolecular functional properties.

Posted: Sep 30th, 2012

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Graphene may replace silicon (w/video)

Norwegian researchers are the world's first to develop a method for producing semiconductors from graphene. This finding may revolutionise the technology industry.

Posted: Sep 28th, 2012

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Graphene: the thickness of it

Graphene has long shown potential for use in electronics, but difficulties in producing the material to a high enough quality has so far prevented the commercialisation of graphene-based devices.

Posted: Sep 28th, 2012

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Nanosciences: All systems go at the biofactory

In order to assemble novel biomolecular machines, individual protein molecules must be installed at their site of operation with nanometer precision. LMU researchers have now found a way to do just that. Green light on protein assembly.

Posted: Sep 28th, 2012

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First NanoQ label awarded in Thailand

The Nanotechnology Association of Thailand presented the first NanoQ label to Supreme Products Co.,Ltd at a press conference in Bangkok on September 27. The NanoQ label certifies that the paint formulation produced by Supreme Product for use in coating the inside of the ambulance contains silver nano particles that have characteristics of anti bacteria.

Posted: Sep 28th, 2012

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Schnelle Transistoren aus dem Drucker

Wissenschaftlern am Institut für Nanotechnologie (INT) des KIT ist ein entscheidender Fortschritt in der gedruckten Elektronik gelungen: Sie haben gezeigt, dass sich superschnelle Feldeffekttransistoren (FET) aus gedruckten anorganischen Oxid-Nanopartikeln herstellen lassen.

Posted: Sep 28th, 2012

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