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Nanotechnology General News

The latest news from academia, regulators
research labs and other things of interest

Europe's central meeting for nanomedicine

For the first time a session on "Open Challenges in Nanomedicine - Problems for problem solvers" will be offered to industrial stakeholders to address challenges they are confronted with and for which they would need technology partnerships with academia and research institutes to solve the problems in a business and application oriented way.

Posted: Aug 23rd, 2011

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Europas zentrale Veranstaltung zur Nanomedizin

Zum ersten Mal wird der Industrie eine Session "Offene Herausforderungen in der Nanomedizin - Probleme fuer Problemloeser" angeboten. Vertreter der Industrie koennen dort binnen zehn Minuten die Herausforderungen praesentieren, mit denen sie konfrontiert sind, und fuer deren Markt- und Anwendungsloesungen sie Technologie-Partnerschaften mit Hochschulen und Forschungseinrichtungen benoetigen.

Posted: Aug 23rd, 2011

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Nanotechnologie in der Natur - Bionik im Betrieb

Die Broschuere "Nanotechnologie in der Natur - Bionik im Betrieb" zeigt aktuelle Produktentwicklungen und Forschungsrichtungen der Bionik im Bereich Materialtechnologie und Nanotechnologie. Sie erscheint zur Auftaktveranstaltung der Veranstaltungsreihe "Bionik im Betrieb" am 30. August 2011.

Posted: Aug 23rd, 2011

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Inkjet printing of single-crystal films

Researchers in Japan have developed a manufacturing technology for single-crystal thin films of organic semiconductors at arbitrary positions on the surface of sheets using a novel inkjet printing technique. The technology allows improving performance of thin-film transistors (TFTs), indispensable building blocks for large-area electronics products such as flat displays.

Posted: Aug 23rd, 2011

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Controlling magnetism with electric fields

An international team of researchers from France and Germany has developed a new material which is the first to react magnetically to electrical fields at room temperature. Previously this was only at all possible at extremely low and unpractical temperatures.

Posted: Aug 23rd, 2011

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Electrodeposition moving to ever smaller dimensions

The focus of a new collaboration is to develop a simulation platform that can be used as a tool for exploring new electrodeposition strategies. By combining the expertise fields of experiments and simulations and their mutual validation, the project aims at yielding a simulation tool which captures the essential processes occurring at wafer level, and thus handle 'real case' situations. The project's results will be fed into the development work for both the 3D and advanced interconnect programs.

Posted: Aug 22nd, 2011

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New technique for trench narrowing and via filling with selective SiGe deposition

Imec has developed a new method for the preferential deposition of silicon-germanium through chemical vapor deposition. They have further engineered this method into an innovative technique for trench narrowing and via filling through deposition only, i.e. without the need of litho/etch and subsequent chemical mechanical polishing. This technique offers a path to decreasing the number of process operations and thus reducing IC manufacturing costs.

Posted: Aug 22nd, 2011

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Summer students present first results on 'nanoscale origami'

This summer, imec welcomed 4 students from John Hopkins University (JHU), a world-class university in Baltimore, US, for a research internship of 10 weeks in the field of bioelectronics. These internships coincide with the announcement of a scientific story on nanoscale origami that has resulted from the internship of the first JHU visiting student in the summer of 2009 with a follow-on program last year. In this work, an approach is presented that allows generating precisely patterned polyhedral nanostructures, envisaged for optical and biosensing applications.

Posted: Aug 22nd, 2011

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Selective CVD growth of GeSn: a new approach for implementing stress in Ge based MOSFETs

Imec reports for the first time selective chemical vapor deposition (CVD) of GeSn in a production-like environment using commercially available Ge and Sn precursors. The resulting GeSn layers with 8% Sn are defect free, fully strained and thermally stable for temperatures up to 500 C. This technique is used to implement uniaxial compressive stress in a Ge channel, the key method for reaching very high mobility values in MOSFETs.

Posted: Aug 22nd, 2011

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Etch-a-sketch with superconductors

Researchers from the London Centre for Nanotechnology and the Physics Department of Sapienza University of Rome have discovered a technique to 'draw' superconducting shapes using an X-ray beam. This ability to create and control tiny superconducting structures has implications for a completely new generation of electronic devices.

Posted: Aug 22nd, 2011

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Simulation of phenomena from optical excitation to charge splitting in organic materials for solar cells

Yoshiyuki Miyamoto from the Dynamic Process Simulation Group at the the Nanosystem Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST), has performed the first-principles simulations that consistently treat from optical excitation to electron-hole splitting in a photovoltaic material formed by molecules having different electron affinities.

Posted: Aug 22nd, 2011

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