Showing Spotlights 1 - 8 of 216 in category All (newest first):
Heat dissipation has increasingly become a bottleneck for modern electronics. In particular, the development of wide bandgap semiconductor devices has led to many advancements of high power and high frequency electronics Scientists now have integrated new super thermal conductors - boron arsenide and boron phosphide that they developed recently - as a thermal substrate for power electronics devices such as gallium nitride high electron-mobility transistors. The study demonstrates high cooling performance better than the best state-of-the-art technologies.
Jul 9th, 2021
Nonvolatile resistive memory (NVRM), also called a 'memristor', is an emerging technology that offers the possibility of in-memory computation and thus holds promise to overcome the von Neumann bottleneck. NVRM is a two-terminal device but, unlike an ordinary resistor, it exhibits hysteresis in input-output characteristics and thus can be also be used as memory. A new theory suggests that such resistive switching is an intrinsic property of a vacancy-inhabited two-dimensional materials and may not depend on the physio-chemical interactions with the electrodes.
Mar 24th, 2021
Skin-interfaced, wearable electronics have attracted significant attention due to their unique roles in preventative monitoring, diagnostic confirmation, and convenient therapeutic options. The ultimate application of these bio-integrated devices for practical and convenient applications hinges on the seamless integration of on-body sensors with wireless transmission modules. As a promising direction toward this class of integrated systems, soft body area sensor networks include on-body sensors for physiological signal monitoring and flexible printed circuit boards for signal conditioning/readout and wireless transmission.
Sep 15th, 2020
Researchers have provided an example of on-demand control of quantum phenomena to design the quantum materials. By state-of-the-art quantum mechanical simulations, they find that a two-dimensional transition-metal ditelluride, MoTe2, can realize a structural phase transition from the semiconducting phase to the topological phase triggered by photoexcitation of carriers alone. The sub-picosecond phase transition can be controlled by varying the laser wavelength. The research is inspired by the classical phase transition theory proposed by Lev Davidovich Landau and Rudolf Ernst Peierls.
Sep 14th, 2020
DNA is probably the most programmable biomaterial for creating a wide range of rationally designed and functionally enhanced nanostructures. The sophisticated, programmable, and addressable DNA nanostructures are strong candidates for constructing nanoelectronic devices. The size of DNA molecules is also key: DNA double-helix has a neighboring base pair distance of 0.34 nm and a diameter of 2.1 - 2.6 nm a, and thus DNA complex-based nanoelectronics may break the 5-nm processing limit of commercial silicon-based semiconductors.
Sep 10th, 2020
Charge density wave (CDW) is a quantum mechanical phenomenon, which induces distortion in the crystal structures of some low-dimensional (1D or 2D) metals, when the temperature is reduced. Such distorted crystal structure is known as CDW phase and its resistivity is much higher than the original symmetric phase. Since the switching between symmetric and CDW phase can also be made by the application of external electric field, these materials are technologically important and have attracted immense attention in the nanoelectronics community.
Aug 6th, 2020
Researchers have fabricated photodetectors on paper by mimicking the action of drawing/writing with a pencil on standard paper. The results indicate that this process can be employed with other layered materials like the semiconducting molybdenum disulfide to fabricate electronic devices on paper. There are many layered materials (so called van der Waals materials) that have similar mechanical properties to graphite and thus are susceptible of being cleaved upon mechanical rubbing against paper substrates.
Jul 23rd, 2020
Novel complementary nanoelectromechanical (CNEM) switches based on complementary ferroelectric nanocracks integrate the advantages of ferroelectric and nanoelectromechanical switches, such as nonvolatility, quasi-zero OFF-state leakage current and low operating voltage. These ferroelectric crack-based CNEM switches could realize energy-efficient and high-density reconfigurable computing, which can be specialized to a particular task through its universal programmability, offering large flexibility and short time from design to realization.
Jun 29th, 2020