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Researchers demonstrate a novel assembly technique for transforming traditional state-of-the-art complementary metal oxide semiconductor (CMOS) based integrated circuits (IC) and other electronic components into LEGO-like modules by providing unique geometrical identity to each module; and assembling these 'LEGO IC' without the need for bonding or soldering but with the highest yield, accuracy and throughput required to maintain a high system performance.
Molecular ferroelectrics are highly desirable as they are environmentally friendly, light-weight, and high spontaneous polarized. Though intensive studies have been focused on molecular ferroelectrics, very few researchers have tried to address the issue of thin film growth. An international research team now presents the first report on the preparation of high-quality large area MOFE films using in-plane liquid phase growth. With this approach, different kinds of novel ferroelectric films can be grown for potential practical applications such as temperature sensing, data storage, actuation, energy harvesting and storage.
Molecular electronics aims to use small organic molecules as the active component in an electrical circuit in order to tailor functionality and achieve new levels of miniaturization with increased functionality via chemical design. Anti-aromatic molecules had been predicted decades ago to have excellent conducting properties. Now researchers have realized a molecular circuit involving an anti-aromatic molecule for the first time.
Since the early days of molecular electronics, tremendous progress has been achieved both theoretically and experimentally by scientists and engineers who were fascinated by intriguing physical, chemical phenomena, and potential device applications of molecular junctions. In a recent paper, scientists review recent experimental efforts for pursuing high-yield functional molecular devices, in which a bundle of molecules (the contacted molecules number more than 1000) is contained in a junction.
Inspired by the unique optical and electronic property of graphene, two-dimensional layered materials - as well as their hybrids - have been intensively investigated in recent years, driven by their potential applications for nanoelectronics. The broad spectrum of atomic layered crystals includes transition metal dichalcogenides (TMDs), semiconducting dichalcogenides, monoatomic buckled crystals, such as black phosphorous (BP), and diatomic hexagonal boron nitride, etc. Tihis article examines the recent advancement of flexible 2D electronic devices based on TMDs and BP.
You surely remember one of the hallmarks of the Mission: Impossible series that shows a secret agent receiving his instructions on a tape or other device that then self-destructs and goes up in a cloud of smoke. Getting pretty close to this Hollywood scenario, minus the smoke, scientists now have demonstrated remote destruction capability of high performance silicon electronics. They also show that in case of tempering, dislocation, or light exposure, electronics on for instance stolen or lost hard drives can self-destruct.
Complex oxide perovskite have been intensively researched for over half a century for their intriguing high temperature superconductivity, thermoelectric, ferroelectricity, colossal magnetoresistance. However, their large band gaps limit their interaction with visible photons. In new work, researchers propose transition metal perovskite chalcogenides (TMPCs) as a new class of versatile semiconductors for optoelectronic applications.
Next-generation electronics will be based on two-dimensional semiconductors, which have a significantly higher resistance than conventional silicon-based electronics. This development is significantly limited by the high contact resistance between the metal electrode and the 2D semiconductor. To minimize the energy dissipation and improve the device performance, it is critical to reduce the contact resistance. Researchers have now shown that MXenes, a class of 2D metal carbides or nitrides, can achieve low contact resistance with 2D semiconductors.