Showing Spotlights 1 - 8 of 29 in category IC, Memory, Storage (newest first):
There is a huge effort underway to use memristor devices in neuromorphic computing applications and it is now reasonable to imagine the development of a new generation of artificial intelligent devices with very low power consumption (non-volatile), ultra-fast performance and high-density integration. In new work,r esearchers were not only able to achieve to small switching effects in memristors using light, they take advantage of a percolating-like nanoparticle morphology to vastly increase the magnitude of the switching between electronic resistance states when light is incident on the device.
Jun 19th, 2019
For the first time, researchers have successfully developed a new version of phase-change memory that reduces the switching time and allows memory cells to produce excellent stability.
The new type of phase-change memory can be as fast as state-of-the-art RAM chips being considered to power artificial intelligence (AI) in phones, and it could also be used to power a range of other smart devices. The new version of phase-change memory could be manufactured with a cheap process: The procedure uses a normal voltage pulse and requires no additional special materials.
Dec 31st, 2018
Resistive random access memory (RRAM) is envisioned as a next generation non-volatile memory because of the simple device geometry, ease of fabrication and operation. The necessity of high-density information storage and its relevance in neuromorphic circuitry has gained much attention and led to the development of multilevel resistive switching (MRS) for multiple memory states. In a recent study, researchers have defined a new figure-of-merit to identify the efficiency of resistive switching devices with multiple memory states. This will assist researches as well as technologist in classifying and deciding the true merit of their memory devices.
Feb 1st, 2016
It seems that computer memory technology is coming full circle. Pioneers in the early 19th century, such as Charles Babbage, first proposed the use of paper memory (albeit non-electronic), where a bit was stored as the presence or absence of a hole in a paper card. State-of-the-art research today again is proposing the use of paper as memory devices. This time, although he paper may be very similar, the bits are not crudely punched holes but nanofabricated device structures. In new work, researchers demonstrated a paper-based, nonvolatile memory device. Theyused a combination of inkjet and screen printing to fabricate resistive RAM memory cells on commercial printing paper.
Jul 29th, 2014
Bi-stability is widely used in digital electronics devices to store binary data. It is the essential characteristic of the flip-flop, a circuit widely used in latches and some types of semiconductor memory. However, it is possible to store more data at the nanoscale with multi-stable memory functions. Researchers have now developed a multi-stable nonvolatile soft memory function by doping ferroelectric nanoparticles into liquid crystal matrices.
Feb 19th, 2014
Future electronics will look nothing like today's rigid boxes, be they the latest smartphones, tablets, or computers. Instead, they will be extremely light, soft, flexible, transparent, and integrated into everyday objects like paper or fabrics. These advanced electronic systems will be fabricated on soft substrates by integrating multiple crucial components such as logic and memory devices as well as their power supply. Researchers have now successfully demonstrated a rewritable, transferable, and flexible sticker-type organic memory on arbitrary nonconventional substrates through a simple, low-temperature and cost-effective one-step methodology.
Oct 25th, 2013
Power dissipation is the limiting factor to the continued scaling of size and speed of conventional silicon technology used for fabrication of integrated circuits and computer chips. For each switch of a transistor, an amount of energy needs to be dissipated that is proportional to the number of electrons and temperature. This condition is of a fundamental nature, resulting from the laws of thermodynamics.However, the assumption underlying this fundamental limit is that the electrons or spins act as an ensemble of independent particles. If instead, the electrons are in a collective state, then the minimum dissipation limit for one switching cycle can be greatly reduced. This fact provides a strong motivation to exploit collective states as alternative variables for information processing.
Nov 8th, 2012
Counterfeiting of bank notes has always been a problem and central banks are leading a high-tech fight against sophisticated counterfeiting operations. For instance, when the European Central Bank designed its new banknotes, they included a variety of security features - holograms, foil stripes, special threads, microprinting, special inks and watermarks. Another high-tech approach are imprinting radio frequency identification (RFID) tags onto banknotes. While the integration of RFID technology on a banknote is technically possible, no banknotes in the world today employ such a technology. In recent work, researchers in Saudi Arabia have now fabricated the first-ever all-polymer, non-volatile, ferroelectric memory on banknotes.
Apr 23rd, 2012