The fundamental issue of large-scale carbon nanotube (CNT) device fabrication remains the biggest challenge for effective commercialization of CNT-based nanoelectronic devices. For CNT electronics to become a reality requires manufacturing techniques to simultaneously and reproducibly fabricate a very large number of such devices on a single chip, each accessible individually for electronic transport. Conventional nanotube growth and device fabrication techniques using chemical vapor deposition or spin-casting are unable to achieve this, due to a lack of precise control over nanotube positioning and orientation. New work conducted at Tel Aviv University utilizes the CVD growth of CNTs over pillar-patterned silicon substrates to facilitate the formation of devices with taut and aligned CNTs grown exclusively at desired positions with built-in electrical contacts.
The most promising applications of graphene are in electronics, detectors, and thermal management. The first graphene field-effect transistors have already been demonstrated. At the same time, for any transistor to be useful for analog communication or digital applications, the level of the electronic low-frequency noise has to be decreased to an acceptable level. Low frequency electronic noise dominates the noise spectrum to a frequency of about 100 kHz. Despite the fact that modern electronic devices such as cell phones and radars operate at a much higher carrier frequency, the low frequency noise is extremely important. Due to unavoidable non-linearities in devices and systems, the low frequency noise gets up-converted, and contributes to the phase noise of the system, thus limiting its performance. It is not possible to build a communication system or detector based on graphene devices until the noise spectral density is decreased to the level comparable with the conventional state-of-the-art transistors. Researchers at the University of California - Riverside have now reported the results of experimental investigation of the low-frequency noise in a double-gate graphene transistors.
The performance of devices like organic light emitting diodes (OLEDs), flexible solar cells, or plastic electronics is sensitive to moisture because water and oxygen molecules seep past the protective plastic layer over time and degrade the organic materials which form the core of these products. To protect these sensitive devices, barrier technologies have been developed that protect them from environmental degradation. State-of-the-art barrier materials employ metal oxide thin films, commonly from aluminum or silicon oxides, which provide excellent protection from atmospheric oxygen and water, but still suffer from problems. A new study demonstrates a nanocomposite material that can initiate self-healing upon the influx of water through pores and cracks by delivering titanium dioxide nanoparticles to the defective site, which ultimately slows the rate of moisture diffusion to the reactive electronic device.
Nanostructured boron and boron-related compounds have attracted considerable scientific attention to exploit their potential use in high temperature electronics, thermoelectrics, and photovoltaics due to their unique chemical and physical properties, such as chemical inertness, hardness, and adjustable energy bandgap. Boron's theoretical tubular structures may even have higher electrical conductivity than carbon nanotubes (CNTs). So far, carbon nanotubes have been considered the most promising material for field emitters, for instance as electron emitters for field emission displays. Field emission results from the tunneling of electrons from a metal tip into vacuum, under application of a strong electric field. The small diameter and high aspect ratio of CNTs is very favorable for field emission. Due to the still existing difficulties of synthesizing CNTs with uniform chirality, a number of technical questions - such as stability, low melting point and uniformity of field emission - remain to be overcome. So scientists still looking to find other ideal candidates. New experiments conducted by scientists in China suggest that boron nanowires might fit the bill.
Ink-jet printing of metal nanoparticles for conductive metal patterns has attracted great interest as an alternative to expensive fabrication techniques like vapor deposition. The bulk of the research in this area focuses on printing metal nanoparticle suspensions for metallization. For example, silver and gold nanoparticle suspensions have been inkjet printed to build active microelectromechanical systems (MEMS), flexible conductors and radio frequency identification (RFID) tags. Nobel metals like silver and gold are preferred nanoparticles for ink-jet formulations because they are good electrical conductors and they do not cause oxidation problems. However, gold and silver still are too expensive for most high volume, ultra low-cost applications such as RFID tags with required unit costs below one cent. A new technique developed in Switzerland uses flame spray synthesis in combination with a simple in-situ functionalization step to synthesize graphene coated copper nanoparticles which are air-stable and can be easily handled at ambient conditions. This work illustrates graphene's potential as a protective shell material for nanoparticles, enabling control and design of the chemical reactivity of non-noble metals.
Using single molecules as electronic components is the ultimate goal for future electronic nanotechnology devices. In order to explore the electronic properties of a single molecule, researchers have to make electrical contact between electrodes and molecules - and this has proven to be a big challenge. The problem is forming stable and reproducible molecular bridges and determining their electrical properties. It has already been shown that molecular bridges can be formed. However, their mechanical stability and reproducibility is usually low. Whether it is really possible to form a single stable molecular bridge, which can act as a 'normal' electrical component at room temperature has yet to be answered. An important step in this direction will be to identify all the mechanics involved in single atom contacts.
In contrast to the often depicted model of a perfect hexagonal lattice cylinder shape of carbon nanotubes, these nanomaterials often become twisted, bent or otherwise deformed during their growth, processing, or characterization. Researchers have found that some of these defects can be associated with a rearrangement of atoms and bonds which in turn will impact on the band structure and therefore affects the electronic properties of the tube. Previous experimental Atomic Force Microscopy and Transmission Electron Microscopy studies of carbon nanotubes have clearly identified their susceptibility to collapse and theoretical predictions of the impact that these deformations have on the electronic properties have been formulated. Experiments at the University of Surrey in the UK are the first to show atomically resolved radially collapsed double-walled carbon nanotubes, bringing also clear evidence of changes in the fundamental electronic behavior of these systems in response to the deformation.
The success of the semiconductor industry has been due in large part to its ability to continuously increase the complexity, and therefore the processing power, of integrated circuits at a given manufacturing cost. Moore?s Law observes that the number of transistors in a computer chip doubles every two years, whilst the cost of making the chip remains the same, due to miniaturization of the components. In order to produce the next generation of computer chips it is necessary to continue to shrink the size of the components on the chip. The miniaturization upon which Moore?s Law rests has been achieved through advances in the photolithographic process used to pattern the components onto to the silicon wafer. A beam of light is projected through a shadow-casting reticule and the light pattern is then directed onto a silicon wafer coated with a photochemically sensitive material, known as a resist. The solubility of the resist is modified by exposure to the light, allowing specific areas of the resist film to be removed, whilst other areas remain as a mask, so that the silicon wafer can be selectively etched, metallized or doped. For many years it has been predicted that the end of photolithography is approaching, and that further miniaturization will require next generation lithography techniques, such as EUV lithography. However, photolithography has proved remarkably resilient, and continues to improve. Unfortunately, whilst the ability of photolithography to pattern small features continues to improve, the industry is beginning to challenge the capabilities of the photosensitive resist.